Search
Are you looking for a scientific paper? Please use the special search function. The standard search does not return results from publications.
Improved far-UVC LEDs: investigations reveal causes of unwanted UVA radiation
/en/research/research-news/improved-far-uvc-leds-investigations-reveal-causes-of-unwanted-uva-radiation
High-resolution spatial measurements uncovered the origin of unwanted parasitic emission at long wavelengths from UVC LEDs. We are now able to implement targeted changes to the manufacturing process,…
Tunnel diode-based distributed feedback (DFB) broad-area diode lasers with excellent results for LiDAR applications
/en/research/research-news/tunnel-diode-based-distributed-feedback-dfb-broad-area-diode-lasers-with-excellent-results-for-lidar-applications
For the first time, FBH has developed wavelength-stabilized DFB broad-area lasers with multiple epitaxially stacked active regions and tunnel junctions. They are designed for emission around…
Advanced in-situ etch depth control for dry etching processes – to achieve optimum device perfor-mance
/en/research/research-news/advanced-in-situ-etch-depth-control-for-dry-etching-processes-to-achieve-optimum-device-perfor-mance
Sophisticated etch processes are required to fabricate high-power diode lasers with excellent performance. We explain exemplarily how to control the etch depth in-situ and why the measuring…
Targeting 6G applications in the sub-THz range – advanced InP bipolar transistor process
/en/research/research-news/targeting-6g-applications-in-the-sub-thz-range-advanced-inp-bipolar-transistor-process
Joint research activities between University of Duisburg-Essen and FBH yield improved performance of InP-based technologies. These rely on optimized epitaxial material and novel process techniques.…
Textile material identification using Shifted Excitation Raman Difference Spectroscopy
/en/research/research-news/textile-material-identification-using-serds
Raman spectroscopy can determine the chemical composition of textile samples. We use an in-house developed 785 nm dual-wavelength diode laser to successfully distinguish between dyed and undyed…
Chip-integrated solution based on diamond NV centers – enabling compact magnetic field cameras with simplified measuring principle
/en/research/research-news/chip-integrated-solution-based-on-diamond-nv-centers-enabling-compact-magnetic-field-cameras-with-simplified-measuring-principle
Imaging weak magnetic fields as produced by electric pulses that propagate through nerves requires complex and expensive devices. With our on-chip multi-pixel sensor, we have developed a novel…
Vertical high-voltage GaN-based pn-diodes on foreign and native substrates – targeting next-generation power electronics
/en/research/research-news/vertical-high-voltage-gan-based-pn-diodes-on-foreign-and-native-substrates-targeting-next-generation-power-electronics
Achieving high blocking strength and low on-state resistance simultaneously is essential for efficient power electronic converters. The relationship between blocking strength, thick epitaxial drift…
World's first line scanner with monolithically integrated terahertz detectors for industrial applications
/en/media-center/press-releases/worlds-first-line-scanner-with-monolithically-integrated-terahertz-detectors-for-industrial-applications
The Ferdinand-Braun-Institut has developed a terahertz (THz) line scanner for plastic components, enabling cost-effective realization of larger scan line lengths in industrial environments. For the…
Laser diodes emitting below 633 nm – targeting quantum photonics
/en/research/research-news/laser-diodes-emitting-below-633-nm-targeting-quantum-photonics
Emerging from our latest advancements, our epitaxial structures now emit at 626 nm, even at room temperature. Moreover, they provide the capability to tune the emission wavelength towards even…
Digital GaN-based transceiver module for future green 5G networks
/en/research/research-news/digital-gan-based-transceiver-module-for-future-green-5g-networks
Our innovative concept combines an LNA with integrated switching functionality and a true digital class-E power amplifier based on FBH’s GaN technology. Serving a wide bandwidth, our approach enables…