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Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations
/en/research/publications/shallow-and-low-resistive-contacts-to-p-in053ga047as-based-on-pdsb-and-pdge-metallisations
Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 × 1018cm3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3-7 × 10-7Ωc
Publications
/en/research/publications/pdznpdau-and-pdznaulab6au-ohmic-contacts-to-p-type-in053ga047as
The resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au contacts to p-In0.53Ga0.47As have been investigated. Annealing of the contacts at 375-425 °C yielded a minimum
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
/en/research/publications/transmission-electron-microscopy-study-of-rapid-thermally-annealed-pdge-contacts-on-in053ga047as
Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, a
He implant-damage isolation of MOVPE grown GaAs/InGaP/InGaAsP layers
/en/research/publications/he-implant-damage-isolation-of-movpe-grown-gaasingapingaasp-layers
4He+ has been implanted in MOVPE grown GaAs/InGaP/InGaAsP layers to obtain damage-isolation. The electrical properties and the thermal long-term stability of the implanted regions have been investigat
Technology of GaAs-Based MMICs for High Temperature Applications
/en/research/publications/technology-of-gaas-based-mmics-for-high-temperature-applications
A GaAs MESFET technology for the fabrication of devices specially developed for continuous, reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Sch
High Temperature MESFET-Based Integrated Circuits Operating up to 300°C
/en/research/publications/high-temperature-mesfet-based-integrated-circuits-operating-up-to-300c
A GaAs MESFET technology for the fabrication of devices for reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Schottky contacts containing WSiN d
Effect of heavy Ga doping on defect structure of SnO2 layers
/en/research/publications/effect-of-heavy-ga-doping-on-defect-structure-of-sno2-layers
Crystal defects in Ga-doped SnO2 grown on SnO2 buffer layers on r-plane sapphire by plasma-assisted molecular beam epitaxy have been analysed by transmission electron microscopy (TEM). The (101)-orien
Polarization of photoluminescence emission from semi-polar (11-22) AlGaN layers
/en/research/publications/polarization-of-photoluminescence-emission-from-semi-polar-11-22-algan-layers
We studied the optical polarization of surface-emitted photoluminescence from thick semi-polar (11-22) AlxGa1-xN layers on m-plane sapphire substrates with aluminum contents x between 0.0 and 0.63 at
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
/en/research/publications/performance-characteristics-of-uv-c-algan-based-lasers-grown-on-sapphire-and-bulk-aln-substrates
The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279nm are investigated. The laser heterostructures were grown by metal-or
MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs
/en/research/publications/movpe-growth-of-alxga1-xn-with-x-05-on-epitaxial-laterally-overgrown-alnsapphire-templates-for-uv-leds
The crystalline perfection of AlxGa1-xN layers with Al content of x ∼ 0.5 on epitaxial laterally overgrown (ELO) AlN with low defect density was investigated by spatially and spectrally reso