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Strengthening German-British collaboration in high-performance photonics

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Berlin-based Ferdinand-Braun-Institut (FBH) and the University of Glasgow to deepen cooperation, focusing on ultra-high-power photonic applications and enhanced exchange of photonics experts and…

Sustainable technology development in focus: first “Green ICT Camp” successfully completed

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In a broad mix of theory and practice, 40 students intensively explored modern information and communication technologies and their environmental impact. The first “Green ICT Camp” organized by the…

Trends in Photonics and Quantum Technologies: FBH at Photonics Days 2024

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On October 9 and 10, 2024, the Ferdinand-Braun-Institut will contribute to the Photonics Days Berlin Brandenburg with lectures and the accompanying exhibition.

ESLW Best Student Talk Award for Nor Ammouri

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Nor Ammouri was honored with the Best Student Talk Award at the European Semiconductor Laser Workshop 2024 (ESLW) in Kassel.

Newly published: frequent on ultra-widebandgap semiconductor devices

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The current frequent issue focuses on recent FBH developments based on wide-bandgap and ultra-widebandgap semiconductors - and their important role in reducing the energy consumption of modern…

Brightness and efficiency scaling of a 1 kW, 780 nm diode laser module for additive manufacturing of aluminum

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We successfully demonstrate industrial 3D-printing of metal test structures in the factory, using a direct-diode high-power laser module that supplies 1 kW continuous wave power at 780 nm…

mmWave active load-pull for RF power transistor optimization

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Our 5G-MIMO measurement system uses active load-pull for precise impedance matching, optimizing transistor performance under large-signal CW excitation. The vector-corrected, on-wafer system enhances…

Compact light control unit for use in a low-SWaP strontium optical atomic clock

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Using FBH’s unique hybrid micro-integration technology, we realized a compact light control unit for laser beam conditioning in a transportable strontium-based optical atomic clock. Equipped with…

Improved stability of InGaN-based laser diodes by overcoming facet degradation

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Blue-violet emitting laser diodes tend to form SiOx deposits on the facet, causing unstable laser thresholds and beam characteristics. A suited facet coating, together with a hermetically sealed TO…

Exploration of high-temperature PECVD SiNx for strain engineering of GaN-HEMTs

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We demonstrate that high-temperature PECVD SiNx passivation layers enable controlled stress engineering in GaN-HEMTs. Our approach specifically shifts the threshold voltage up to 1.4 V, supporting…