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Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs
/en/research/publications/effect-of-strain-and-growth-temperature-on-in-incorporation-and-properties-of-high-power-laser-diodes-in-movpe-grown-ingaaspgaas
Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs F. Bugge, G. Erbert, S. Gramlich, I. Rechen
MOVPE growth of (In,Ga)(As,P) for high-power laser diodes
/en/research/publications/movpe-growth-of-ingaasp-for-high-power-laser-diodes
MOVPE growth of (In,Ga)(As,P) for high-power laser diodes A. Knauer, F. Bugge, G. Erbert, A. Oster, M. Weyers Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Ger
Carbon doped GaAs grown by MOVPE using CBr4
/en/research/publications/carbon-doped-gaas-grown-by-movpe-using-cbr4
Carbon doped GaAs grown by MOVPE using CBr4 P. Kurpas, E. Richter, D. Gutsche, F. Brunner, M. Weyers Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V-semiconductor interfaces
/en/research/publications/preparation-transmission-electron-microscopy-and-microanalytical-investigations-of-metal-iii-v-semiconductor-interfaces-1-1
Ohmic metallizations on semiconductors such as In0.53Ga0.47As and GaAs have been analyzed by cross-sectional transmission electron microscopy. To obtain a lattice image of multilayer structures in the
Publications
/en/research/publications/quotcomposition-fluctuations-in-ingaasp-single-layers-and-laser-structures-based-on-gaasquot
XRD investigations of WSiN and LaB6 Layers on GaAs
/en/research/publications/xrd-investigations-of-wsin-and-lab6-layers-on-gaas
The microstructures of WSiN and LaB6 thin layers (amorphous or crystalline) on GaAs substrates are studied in dependence on the deposition and annealing treatments by means of the TFXRD parallel-beam
XTEM investigation of Ge/Pd shallow contact to p-In0.53Ga0.47As
/en/research/publications/xtem-investigation-of-gepd-shallow-contact-to-p-in053ga047as
Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking plac