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Ramsey-Bordé atom interferometry with a thermal strontium beam for a compact optical clock
/en/research/publications/ramsey-borde-atom-interferometry-with-a-thermal-strontium-beam-for-a-compact-optical-clock
Compact optical atomic clocks have become increasingly important in field applications and clock networks. Systems based on Ramsey-Bordé interferometry (RBI) with a thermal atomic beam seem promising…
German Microwave Conference (GeMiC)
/en/events/german-microwave-conference-gemic
FBH will participate in the 16th German Microwave Conference (GeMiC) and present current research results.
Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers
/en/research/publications/influence-of-the-passivation-method-on-the-performance-of-635-nm-ridge-waveguide-lasers
High power, compact, red edge-emitting lasers based on GaInP quantum wells are desirable for applications such as laser display technologies or two-photon upconversion. Here, we investigate the…
QNC Summit 2025
/en/events/qnc-summit-2025
The Research Fab Microelectronics Germany (FMD) invites the hardware development community to Berlin for the second QNC Summit on March 6–7, 2025, to exchange insights on quantum and neuromorphic…
Optical metrology for efficient manufacturing of high-quality VCSELs
/en/research/research-news/optical-metrology-for-efficient-manufacturing-of-high-quality-vcsels
Using in-situ and ex-situ optical metrology, we have optimized VCSEL growth and etching processes. This ensures precise layer control, aligning emission wavelengths efficiently and enabling “first…
Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K
/en/research/publications/radiative-and-nonradiative-recombination-processes-in-algan-quantum-wells-on-epitaxially-laterally-overgrown-alnsapphire-from-10-to-500-k
Radiative and nonradiative recombination processes are investigated in the temperature range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates.…
Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations
/en/research/publications/investigation-of-degradation-dynamics-of-265-nm-leds-assisted-by-el-measurements-and-numerical-simulations
We studied four AlGaN-based 265 nm LEDs with increasing QW thickness (1.4, 3, 6 and 9 nm) during a constant current stress at 100 A cm−2. We focused our attention on the parasitic…
Ultraviolet‑B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors
/en/research/publications/ultraviolet-b-resonant-cavity-light-emitting-diodes-with-tunnel-junctions-and-dielectric-mirrors
We demonstrate the first electrically injected AlGaN-based ultraviolet-B resonant-cavity light-emitting diode (RCLED). The devices feature dielectric SiO2/HfO2 distributed Bragg reflectors enabled by…
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC
/en/research/publications/vertical-gan-devices-reliability-challenges-and-lessons-learned-from-si-and-sic
We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low…
INTENTAS - an entanglement-enhanced atomic sensor for microgravity
/en/research/publications/intentas-an-entanglement-enhanced-atomic-sensor-for-microgravity
The INTENTAS project aims to develop an atomic sensor utilizing entangled Bose-Einstein condensates (BECs) in a microgravity environment. This key achievement is necessary to advance the capability…