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Theory of the Linewidth–Power Product of Photonic–Crystal Surface–Emitting Lasers
/en/research/publications/theory-of-the-linewidth-power-product-of-photonic-crystal-surface-emitting-lasers
A general theory for the intrinsic (Lorentzian) linewidth of photonic–crystal surface–emitting lasers (PCSELs) is presented. The effect of spontaneous emission is modeled by a classical Langevin…
Nonlinear beam conversion with multi-spectral components
/en/research/publications/nonlinear-beam-conversion-with-multi-spectral-components
We characterized the intra-cavity mode patterns due to the concurrence of dual-optical parametric oscillations (OPOs) followed by second-harmonic generation (SHG) and sumfrequency generation (SFG)…
Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage
/en/research/publications/epitaxy-of-7-mm-thick-gan-drift-layers-on-150-mm-si111-substrates-realizing-vertical-pn-diodes-with-1200-v-breakdown-voltage
Metal-organic chemical vapor deposition growth of vertical GaN PN structures on 6" Si(111) substrates enabling a 1200 V breakdown voltage is demonstrated. Thanks to an optimized buffer structure…
The influence of experimental imperfections on photonic GHZ state generation
/en/research/publications/the-influence-of-experimental-imperfections-on-photonic-ghz-state-generation
While the advantages of photonic quantum computing, including direct compatibility with communication, are apparent, several imperfections such as loss and distinguishability presently limit actual…
K/Ka-Band–GaN–High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance
/en/research/publications/kka-band-gan-high-electron-mobility-transistors-technology-with-700-ms-mm-1-extrinsic-transconductance
In this study, the impacts of fabrication technology and epitaxial layer design on the transconductance (gm) of radio frequency AlGaN/GaN high-electron-mobility transistors (HEMTs) are examined.…
Contact
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Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Phone +49 30 63922600 Fax +49 30 63922602 Email fbh@fbh-berlin.de How to find…
How to find us
/en/contact/how-to-find-us
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin, Germany By aircraft – from BER Airport Bus 164 (direction S Köpenick) to…
Dissertations
/en/publications/dissertations
Philipp Hildenstein Application of thermo-optic beam control in GaAs-based edge emitters Zugl.: Dissertation Technische Universität Berlin, 2025. Anisuzzaman Boni Efficiency optimization of…
Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O Single Crystals Grown by the Czochralski Method
/en/research/publications/solid-solution-limits-and-thorough-characterization-of-bulk-beta-alxga1-x2o-single-crystals-grown-by-the-czochralski-method
With comprehensive crystal growth experiments of β-(AlxGa1-x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be…
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
/en/research/publications/alganaln-heterostructures-an-emerging-platform-for-integrated-photonics
We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip…