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A highly efficient GHz switching GaN-based synchronous buck converter module
/en/research/publications/a-highly-efficient-ghz-switching-gan-based-synchronous-buck-converter-module
The paper presents a highly efficient GaN-based synchronous buck converter suitable for switching in the lower GHz range. The module includes a very compact 2-stage GaN half-bridge converter MMIC…
Progress in GaAs-based Semiconductor Sources For High Brightness Beam-Combined Applications
/en/research/publications/progress-in-gaas-based-semiconductor-sources-for-high-brightness-beam-combined-applications
An overview is presented of studies at the FBH into GaAs-based semiconductor sources tailored for higher brightness in beam-combined applications, by making use of innovative device and packaging…
Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
/en/research/publications/non-uniform-longitudinal-current-density-induced-power-saturation-in-gaas-based-high-power-diode-lasers
The output power of modern 975nm GaAs-based broad area diode lasers is limited by increasing carrier and photon losses at high bias. We use experiment and one-dimensional calculations on these…
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
/en/research/publications/challenges-to-overcome-breakdown-limitations-in-lateral-beta-ga2o3-mosfet-devices
In this work, the fabrication of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si-doped homoepitaxial layers on (100) Mg-doped semi-insulating β-Ga2O3…
Wide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique
/en/research/publications/wide-field-spectral-imaging-with-shifted-excitation-raman-difference-spectroscopy-using-the-nod-and-shuffle-technique
Wide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the…
Mode competition in broad-ridge-waveguide lasers
/en/research/publications/mode-competition-in-broad-ridge-waveguide-lasers
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study…
Material interfaces as performance-limiting factors in high power GaAs-based diode lasers
/en/research/publications/material-interfaces-as-performance-limiting-factors-in-high-power-gaas-based-diode-lasers
We review recent studies into internal and external material interface effects in GaAs-based broad-area diode-lasers, where these limit power and efficiency. The finite capture time for carriers into…
High-temperature annealing of AlN films grown on 4H-SiC
/en/research/publications/high-temperature-annealing-of-aln-films-grown-on-4h-sic
The effect of high-temperature annealing (HTA) at 1700°C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of…
High-Temperature Annealing of AlGaN
/en/research/publications/high-temperature-annealing-of-algan
In the past few years, high-temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. Herein, the example of Al0.77Ga0.23N is used to…
Design of an Embedded Broadband Thermoelectric Power Sensor in the InP DHBT Process
/en/research/publications/design-of-an-embedded-broadband-thermoelectric-power-sensor-in-the-inp-dhbt-process
The thermopile-based thermoelectric sensor has emerged as an important approach for microwave power measurement. It employs the Seebeck effect, which converts the microwave power into the heat and…