Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Charge-shifting optical lock-in detection with shifted excitation Raman difference spectroscopy for the analysis of fluorescent heterogeneous samples
/en/research/publications/charge-shifting-optical-lock-in-detection-with-shifted-excitation-raman-difference-spectroscopy-for-the-analysis-of-fluorescent-heterogeneous-samples
Charge-shifting optical lock-in detection with shifted excitation Raman difference spectroscopy for the analysis of fluorescent heterogeneous samples K. Sowoidnicha, M. Maiwalda,…
Strongly coupled, high-quality plasmonic dimer antennas fabricated using a sketch-and-peel technique
/en/research/publications/strongly-coupled-high-quality-plasmonic-dimer-antennas-fabricated-using-a-sketch-and-peel-technique
A combination of helium- and gallium-ion beam milling together with a fast and reliable sketch-and-peel technique is used to fabricate gold nanorod dimer antennas with an excellent quality factor and…
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes
/en/research/publications/improving-aln-crystal-quality-and-strain-management-on-nanopatterned-sapphire-substrates-by-high-temperature-annealing-for-uvc-light-emitting-diodes
Herein, AlN growth by metalorganic vapor-phase epitaxy on hole-type nanopatterned sapphire substrates is investigated. Cracking occurs for an unexpectedly thin-layer thickness, which is associated to…
Group III-Nitride-Based UV Laser Diodes
/en/research/publications/group-iii-nitride-based-uv-laser-diodes
Recent progress in the development of deep ultraviolet lasers is reviewed as well as challenges for the heterostructure design and epitaxial growth for AlGaN-based laser diodes are discussed. The…
A Short Introduction to Semiconductor Nanophotonics
/en/research/publications/a-short-introduction-to-semiconductor-nanophotonics
Semiconductor nanophotonic devices, confining electronic excitations and light on a nanometer spatial scale, could provide valuable solutions to many challenges that society is facing. One example…
Perspektiven physikalischer Verfahren der Antiseptik und Desinfektion
/en/research/publications/perspektiven-physikalischer-verfahren-der-antiseptik-und-desinfektion
Der seit eingien Jahren an Bedeutung gewinnende Einsatz hochenergetischer UVC-Strahlung, antimikrobieller blauer Strahlung und physikalischer kalter Plasmen (KP) zur Desinfektion ist im Vergleich zur…
Calibration Substrate Design for Accurate mm-Wave Probe-Tip Calibration
/en/research/publications/calibration-substrate-design-for-accurate-mm-wave-probe-tip-calibration
This work presents the design concept, EM-simulation and measurement results of a new calibration substrate developed to address probe-tip calibration challenges and to improve calibration accuracy…
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
/en/research/publications/structural-and-luminescence-imaging-and-characterisation-of-semiconductors-in-the-scanning-electron-microscope
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging(ECCI) and cathodoluminescence (CL) hyperspectral imaging provide…
Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure
/en/research/publications/output-matching-network-design-for-highly-efficient-inp-dhbt-w-band-pas-utilizing-a-defected-ground-structure
Output matching networks (OMNs) are substantially determining the performance of millimetre wave power amplifiers (PAs). In terms of efficiency, there are two major requirements for OMNs: First is to…
An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs
/en/research/publications/an-improved-em-simulation-procedure-to-extract-extrinsic-elements-of-terahertz-inp-dhbts
For accurate small-signal modeling of double heterojunction bipolar transistors (DHBT), electromagnetic (EM) simulations of the outer shell of the DHBT are used for de-embedding the external…