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Traveling Wave Analysis of Non-Thermal Far-Field Blooming in High-Power Broad-Area Lasers
/en/research/publications/traveling-wave-analysis-of-non-thermal-far-field-blooming-in-high-power-broad-area-lasers
With rising current, the lateral far-field angle of high-power broad-area lasers widens (far-field blooming), which can be partly attributed to non-thermal effects due to carrier-induced refractive…
Reliability of high-power 1030 nm DBR tapered diode lasers with different lateral layouts
/en/research/publications/reliability-of-high-power-1030-nm-dbr-tapered-diode-lasers-with-different-lateral-layouts
Reliability of high-power 1030 nm DBR tapered diode lasers with different lateral layouts A. Müller, C. Zink, K. Häusler, B. Sumpf Ferdinand-Braun-Institut,…
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
/en/research/publications/degradation-of-inalgan-based-uvb-leds-and-migration-of-hydrogen
We report on the degradation of the electro-optical parameters of (In)AlGaN-based ultraviolet-B light-emitting diodes (LEDs) stressed at a constant dc current of 100 mA and the simultaneous…
Investigation of controlled external feedback on the properties of low and high-power frequency stabilized diode lasers
/en/research/publications/investigation-of-controlled-external-feedback-on-the-properties-of-low-and-high-power-frequency-stabilized-diode-lasers
Investigation of controlled external feedback on the properties of low and high-power frequency stabilized diode lasers C. Zink1, M. Christensen2, M.T. Jamal2, A.K. Hansen2,…
Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers
/en/research/publications/theoretical-investigation-of-anti-index-guiding-inactively-q-switched-two-section-diode-lasers
We present a new theoretical design for diode lasers which should be capable of generating sub-100-ps pulses with pulse energies of more than 10 nJ per 100-µm-contact width by active…
NiCr resistors for terahertz applications in an InP DHBT process
/en/research/publications/nicr-resistors-for-terahertz-applications-in-an-inp-dhbt-process
In this article we report on the development of nickel-chrome (NiCr) thin film resistors (TFRs) for application in an Indium Phosphide (InP) Hetero-Bipolar Transistor process. We developed a stable…
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
/en/research/publications/stabilization-of-sputtered-alnsapphire-templates-during-high-temperature-annealing
In this work we investigated annealing of 350 nm and 450 nm thick sputtered (SP) AlN on sapphire in the temperature range from 1650 °C to 1730 °C. The most distinct…
Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics
/en/research/publications/vertical-gan-n-channel-misfets-on-ammonothermal-gan-substrate-temperature-dependent-dynamic-switching-characteristics
Switching of GaN-based vertical-trench gate MISFET on ammonothermal n-type GaN substrate are studied as a function of temperature. Pulsed ON-state IV characterization revealed three unexpected…
AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxialgrowth of AlN on sapphire
/en/research/publications/aln-and-alnal2o3-seed-layers-from-atomic-layer-deposition-for-epitaxialgrowth-of-aln-on-sapphire
The annealing of amorphous AlN and AlN/Al2O3 seed layers from atomic layer deposition (ALD) on sapphire substrates and their application as starting layers for metal-organic vapor phase epitaxial…
Coherent combining of high brightness tapered amplifiers for efficient non-linear conversion
/en/research/publications/coherent-combining-of-high-brightness-tapered-amplifiers-for-efficient-non-linear-conversion
We report on a coherent beam combination of three high-brightness tapered amplifiers, which are seeded by a single-frequency laser at λ = 976 nm in a simple architecture with…