Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
/en/research/publications/bandwidth-improvement-of-mmic-single-pole-double-throw-passive-hemt-switches-with-radial-stubs-in-impedance-transformation-networks
In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at…
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
/en/research/publications/continuous-wave-operation-of-dfb-laser-diodes-based-on-gan-using-10th-order-laterally-coupled-surface-gratings
Single longitudinal mode continuous-wave operation of distributed-feedback (DFB) laser diodes based on GaN is demonstrated using laterally coupled 10th-order surface Bragg gratings. The gratings…
AlGaN/GaN HEMT based sensor and system for polar liquid detection
/en/research/publications/algangan-hemt-based-sensor-and-system-for-polar-liquid-detection
In this paper, a GaN-high electron mobility transistor (HEMT) based sensor is designed, fabricated and characterized for polar liquid sensing. The fabricated HEMT sensor chip is packaged by using low…
Growth and Properties of Intentionally Carbon-Doped GaN Layers
/en/research/publications/growth-and-properties-of-intentionally-carbon-doped-gan-layers
Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a…
Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy
/en/research/publications/designing-sapphire-surface-patterns-to-promote-algan-overgrowth-in-hydride-vapor-phase-epitaxy
Lateral overgrowth of patterned c-plane oriented sapphire substrates(PSS) with AlGaN using hydride vapor phase epitaxy was investigated with focus on how to suppress parasitic non c-planar…
Highly Efficient High-Brightness 970nm Ridge Waveguide Lasers
/en/research/publications/highly-efficient-high-brightness-970nm-ridge-waveguide-lasers
In this letter we present new results on high power 970 nm ridge waveguide lasers based on an extreme double asymmetric epitaxial design. Due to an improved lateral-longitudinal design an…
Generalization of coupled S-parameter calculation to compute beam impedances in particle accelerators
/en/research/publications/generalization-of-coupled-s-parameter-calculation-to-compute-beam-impedances-in-particle-accelerators
In this article, a decomposition approach for the computation of beam coupling impedances is proposed. This approach can account for the mutual electromagnetic coupling in long accelerator structures…
Theoretical studies of the generation of picoseconds pulses with two-section blueviolet semiconductor lasers
/en/research/publications/theoretical-studies-of-the-generation-of-picoseconds-pulses-with-two-section-blueviolet-semiconductor-lasers
We report the results of theoretical investigations of the generation of sub-10 ps pulses by a blue-violet InGaN two-section laser. The principle of pulse generation is active Q-switching. We…
Surface Bragg gratings for high brightness lasers
/en/research/publications/surface-bragg-gratings-for-high-brightness-lasers
Surface Bragg gratings for high brightness lasers J. Fricke, H. Wenzel, O. Brox, P. Crump, B. Sumpf, K. Paschke, M. Matalla, G. Erbert, A. Knigge, and…
Micro-integrated dual-wavelength ridge-waveguide master oscillator power amplifier with an optical output power of 0.5 W at 785 nm
/en/research/publications/micro-integrated-dual-wavelength-ridge-waveguide-master-oscillator-power-amplifier-with-an-optical-output-power-of-05-w-at-785-nm
Micro-integrated dual-wavelength ridge-waveguide master oscillator power amplifier with an optical output power of 0.5 W at 785 nm A. Müller, M. Maiwald, B. Sumpf …