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First ridge waveguide lasers with sufficient efficiency for high-power spectral beam combining systems
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FBH recently developed highly efficient RW lasers suitable for SBC systems, used e.g. in materials processing. These bars can potentially exceed the brilliance of solid-state laser systems with high…
Integrated quantum optics in laser-written waveguide structures
/en/research/research-news/integrated-quantum-optics-in-laser-written-waveguide-structures
Integrated quantum optics in laser-written waveguide structures Prof. Dr. Alexander SzameitUniversität Rostock
New diode laser systems with reduced sensitivity to optical feedback
/en/research/research-news/new-diode-laser-systems-with-reduced-sensitivity-to-optical-feedback
New diode laser systems with reduced sensitivity to optical feedback Nils WernerFerdinand-Braun-Institut, Berlin
On very small and very large MIMO radars
/en/research/research-news/on-very-small-and-very-large-mimo-radars
On very small and very large MIMO radars Prof. Dr.-Ing. Christian WaldschmidtUniversität Ulm, Institut für Mikrowellentechnik
"Top 40 under 40" - Markus Krutzik awarded by business magazine Capital
/en/media-center/press-releases/top-40-under-40-markus-krutzik-awarded-by-business-magazine-capital
The business magazine Capital has selected Dr. Markus Krutzik as a talent in the category "Society and Science" for its "Young Elite - Top 40 under 40". On November 21, the scientist, who researches…
Advances in epitaxial chip design for increased efficiency at high optical powers in GaAs-based broad area lasers
/en/research/research-news/advances-in-epitaxial-chip-design-for-increased-efficiency-at-high-optical-powers-in-gaas-based-broad-area-lasers
BA diode lasers are widely used in industrial materials processing. FBH scientists recently developed the extreme-triple asymmetric (ETAS) design, leading to significantly improved power conversion…
International workshop on UV materials and devices (IWUMD)
/en/events/international-workshop-on-uv-materials-and-devices-iwumd
FBH at IWUMD
A new method of monolithic GaN HEMT integration using mechanical strain tuning
/en/research/research-news/a-new-method-of-monolithic-gan-hemt-integration-using-mechanical-strain-tuning
FBH has developed a new technique that utilizes processing parameters to tailor the threshold voltage and also the current density without the need for changes of the epitaxial layer sequence.
FBH again received TOTAL E-QUALITY award
/en/events/fbh-again-received-total-e-quality-award
On October 31, 2018, the Ferdinand-Braun-Institut has again been awarded with the TOTAL E-QUALITY award for its dedicated involvement in equal opportunities and the resulting measures for…
IWN 2018
/en/events/iwn-2018
FBH is represented at the International Workshop on Nitride Semiconductors