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Thermal and Electro-Thermal Modeling in Power Electronics: from Device, to Package, to System
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Thermal and Electro-Thermal Modeling in Power Electronics: from Device, to Package, to System Prof. Roberto Menozzi, PhDThe University of Parma
Optimization of GaN Microwave Power Amplifiers with Class-G Supply Modulation
/en/events/optimization-of-gan-microwave-power-amplifiers-with-class-g-supply-modulation
Optimization of GaN Microwave Power Amplifiers with Class-G Supply Modulation Nikolai WolffFerdinand-Braun-Institut, Berlin
Herausforderungen bei der praktischen Anwendung von GaN Leistungshalbleitern
/en/research/research-news/herausforderungen-bei-der-praktischen-anwendung-von-gan-leistungshalbleitern
Herausforderungen bei der praktischen Anwendung von GaN Leistungshalbleitern Martin KrellmannBeaplas GmbH
FBH at Photonics West 2018
/en/events/fbh-at-photonics-west-2018-1
You will find us at the Photonics West 2018 exhibition in San Francisco (USA) at the German Pavilion, booth 4529. The FBH is also well represented at the accompanying conferences (Bios, Lase,…
Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von GaN und Barium-Strontium-Titanate
/en/research/research-news/hocheffiziente-frequenzagile-mikrowellen-leistungsverstaerker-auf-basis-von-gan-und-barium-strontium-titanate
Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von GaN und Barium-Strontium-Titanate Sebastian PreisFerdinand-Braun-Institut Berlin
Full value chain – tailored diode lasers and UV LEDs
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FBH presents its capability in diode lasers and UV LEDs at the Photonics West 2018 trade show and the accompanying conferences. All devices are optimized to fit the respective application;…
Call for Abstracts: UV LEDs Technologies and Applications
/en/events/call-for-abstracts-uv-leds-technologies-and-applications
Abstract submission deadline: 15.12.2017
Gallium oxide MISFETs for power electronics applications
/en/research/research-news/gallium-oxide-misfets-for-power-electronics-applications
Gallium oxide is a promising ultra-wide-bandgap semiconductor for future high-voltage power electronics applications due to its outstanding material properties. FBH has now successfully demonstrated…
FBH demonstrates fully digital transmitter chain
/en/research/research-news/fbh-demonstrates-fully-digital-transmitter-chain
FBH has demonstrated a fully digital transmitter chain, combining modulator and amplifier into one coherent system - an important step towards the usability of such systems in real-world…
600 V Class GaN HEMT-Based Power Electronics
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600 V Class GaN HEMT-Based Power Electronics Ingmar KallfassInstitute of Robust Power Semiconductor Systems, University of Stuttgart