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FBH at Photonics West 2018

Conferences & Exhibition: 27.01. - 01.02.2018, San Francisco (USA)

FBH presents its research results at the world's leading conference for optics and photonics and is also represented on-site at the German Pavilion at booth 4529. The conference program and further information are provided on the conference website. FBH contributions at the accompanying conferences:

BIOS

29.1.

  • Shifted excitation Raman difference spectroscopy: from diode lasers to in situ applications (Invited Paper) [10509-2])
  • Session 4: Plasmonics, Sensing and Bioanalytical Applications, Chair: Martin Maiwald

Lase

29.1.

  • Forward development of high power diode lasers [10514-8]
  • Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers [10514-9]
  • 970-nm ridge waveguide diode laser bars for high power DWBC systems [10514-13]
  • Compact deep UV laser system at 222.5 nm by frequency doubling wavelength-stabilized emission of a micro-integrated high-power GaN diode laser module [10516-5]

30.1.

  • Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications [10513-8]
  • Wavelength stabilized high pulse power laser diodes for automotive LIDAR [10514-25]
  • Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration [10514-28]
  • Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm [10514-32]

31.1.

  • Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range [10518-44]

1.2.

  • Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers [10513-43]

Opto

29.1.

  • 633-nm single-mode master-oscillator power-amplifier module [10528-12]
  • 10th-order laterally coupled GaN-based DFB laser diodes with v-shaped surface gratings (Invited Paper) [10553-7]

30.1.

  • Frequency locking of compact laser-diode modules at 633 nm [10539-6]
  • Pico- and nanosecond investigations of the lateral nearfield of broad area lasers under pulsed high-current excitation [10553-17]
  • Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm [10553-19]
  • Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser [10553-20]
  • Challenges and prospects for AlGaN-based deep UV LED technologies (Invited Paper) [10554-14]
  • Deep-UV LEDs emitting at 232 nm featuring low contact resistance V-based electrodes on n-Al0.9Ga0.1N [10554-17]

31.1.

  • Impact of defect-generation and diffusion in deep-UV (In)AlGaN-based LEDs submitted to constant current stress [10554-35]
  • Thermocompression bonding for high-power-UV LEDs [10554-46]
  • Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far-field divergence [10526-52]
  • Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light (Poster) [10535-72]
  • Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers [10553-33]

1.2.

  • From heterostructure design to package: development of efficient and reliable UVB LEDs (Invited Paper) [10532-70]
  • Electrical p-contacts for UV-LEDs: contact resistivity, reflectivity, and aging performance [10532-74]
  • Diffraction limited 1064 nm monolithic DBR-master oscillator power amplifier with more than 7 W output power [10553-45]
  • Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers [10553-46]
  • 5.5 nm wavelength-tunable high-power MOPA diode laser system at 971 nm [10553-48]
  • Comparison for 1030 nm DBR-tapered diode lasers with 10 W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering [10553-49]