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Terahertz frequency generation with monolithically integrated dual wavelength distributed Bragg reflector semiconductor laser diode
/en/research/publications/terahertz-frequency-generation-with-monolithically-integrated-dual-wavelength-distributed-bragg-reflector-semiconductor-laser-diode
Optoelectronic terahertz (THz) generation techniques have helped to narrow the THz gap and have opened up a wealth of new applications for THz technology. However, the development of THz systems into…
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
/en/research/publications/highly-reflective-p-contacts-made-of-pd-al-on-deep-ultraviolet-light-emitting-diodes
Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated. Different Pd-Al metal stacks have…
Spectral Mode Hop Characteristics of Ridge Waveguide Lasers With Distributed Bragg-Reflector
/en/research/publications/spectral-mode-hop-characteristics-of-ridge-waveguide-lasers-with-distributed-bragg-reflector
In this letter, the mode hop characteristics of distributed Bragg-reflector ridge waveguide lasers emitting at 1120 nm with different resonator geometries and facet reflectivities are…
Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability
/en/research/publications/compact-high-power-diode-laser-mopa-system-with-55-nm-wavelength-tunability
A hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W output power at 971.8 nm is presented. It consists of a distributed Bragg reflector (DBR) laser, which is collimated…
Polarization-Engineered n+GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs
/en/research/publications/polarization-engineered-n-ganinganalgangan-normally-off-mos-hemts
The proposal, processing and performance of n+GaN/InGaN/AlGaN/GaN normally-off metal-oxide-semiconductor (MOS) HEMTs with a recessed 2-µm long gate/8-µm source-drain distance are…
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
/en/research/publications/technology-and-reliability-of-normally-off-gan-hemts-with-p-type-gate
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and…
Cross Conduction of GaN HFETs in Half-Bridge Converters
/en/research/publications/cross-conduction-of-gan-hfets-in-half-bridge-converters
Cross conduction in GaN HFETs is particularly critical due to the high dVDS/dt and small gatesource capacitances in conjunction with moderate drain-gate feed-back capacitances. Therefore, the…
High-power lasers
/en/research/publications/high-power-lasers
High-power lasers H. Wenzel, A. Zeghuzi Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Design of a compact diode laser system for dual-species atom interferometry with rubidium and potassium in space
/en/research/publications/design-of-a-compact-diode-laser-system-for-dual-species-atom-interferometry-with-rubidium-and-potassium-in-space
We report on a micro-integrated high power diode laser based system for the MAIUS II/III missions. The lasersystem features fiber coupled and frequency stabilized external cavity diode lasers (ECDL)…
Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
/en/research/publications/effect-of-electron-blocking-layer-doping-and-composition-on-the-performance-of-310-nm-light-emitting-diodes
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier…