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Facts & Figures

View on FBH building

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH)
Gustav-Kirchhoff-Straße 4, 12489 Berlin
Phone +49 30 63922600
Email fbh(at)fbh-berlin.de
Web www.fbh-berlin.de

Management

Prof. Dr.-Ing. Patrick Scheele (Scientific Managing Director)
phone +49 30 634922601, patrick.scheele(at)fbh-berlin.de

Dr. Karin-Irene Eiermann (Administrative Managing Director)
Tel. +49 30 639258003, irene.eiermann(at)fbh-berlin.de

1992   founded

member of the Leibniz Association

383   Employees

including 200 scientists,
30 student assistants

43.3   m. € Revenue (2023)

19.3 million € basic funding
17.2 million € public third-party funding
6.8 million € industrial contracts

Research Topics & Competencies

  • Center of competence for III-V semiconductors – one of the most capable and major businesses in this field in Europe
  • Applied research and development of microwave and optoelectronic devices

  • high-power diode lasers: broad area & bars
  • high-brightness & narrowband diode lasers
  • hybrid laser modules (cw & pulsed): from NIR to UV spectral range, e.g. for biophotonics, laser sensors, laser metrology, quantum sensors…
  • nitride laser diodes for the blue & UV spectral range
  • short-wave UV LEDs, e.g. for sensors, disinfection, medical & production technology, …

  • electro-optical components & hybrid micro-integrated modules
  • integrated quantum sensors based on atomic gases
  • nanostructured diamond systems & materials
  • quantum emitters & nanofabricated optical waveguide chips

  • GaN microwave transistors & MMICs
  • advanced power amplifier concepts for the wireless infrastructure
  • integrated circuits with InP HBTs for the 100…500 GHz frequency range (THz electronics)
  • fast drivers for laser diodes
  • compact sources for microwave plasmas
  • GaN power electronics

  • epitaxy (MOVPE) of GaAs- & GaN-based layer structures for devices
  • (Al)GaN HVPE for bulk crystal growth
  • in situ control techniques for MOVPE & HVPE
  • complete process line 2" - 4" for GaAs, InP, SiC & GaN devices, including laser micro processing
  • InP HBT technology for mm-wave & THz applications, hetero-integrated SiGe-BiCMOS/InP-HBT foundry with IHP
  • mounting & assembly

Outreach

Partner of

  • Technische Universität Berlin
  • Humboldt-Universität zu Berlin
  • Goethe-Universität Frankfurt am Main
  • Universitäy of Duisburg-Essen
  • Brandenburg University of Technology Cottbus-Senftenberg
  • Research Fab Microelectronics Germany (FMD)
  • Zwanzig20 consortium „Advanced UV for Life“ (coordinated by FBH)
  • iCampµs
  • Photonics Cluster Berlin Brandenburg
  • ...