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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
/en/research/publications/investigation-of-surface-donors-in-al2o3algangan-metal-oxide-semiconductor-heterostructures-correlation-of-electrical-structural-and-chemical-properties
III-N surface polarization compensating charge referred here to as ‘surface donors’ (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown…
Highly Efficient 1.8-GHz Amplifier With 120-MHz Class-G Supply Modulation
/en/research/publications/highly-efficient-18-ghz-amplifier-with-120-mhz-class-g-supply-modulation
A broadband and highly efficient class-G supply modulated power amplifier (PA) system with 120-MHz instantaneous modulation bandwidth operating in the 1.8-GHz band is presented in this paper. The…
70 W GaN-HEMT Ku-Band Power Amplifier in MIC Technology
/en/research/publications/70-w-gan-hemt-ku-band-power-amplifier-in-mic-technology
In this paper the design, implementation, and experimental results of a Ku-band 70 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A two-stage design approach with two…
Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
/en/research/publications/multi-octave-bandwidth-100-w-gan-power-amplifier-using-planar-transmission-line-transformer
In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome…
10.5 W central lobe output power obtained with an efficient 1030 nm DBR tapered diode laser
/en/research/publications/105-w-central-lobe-output-power-obtained-with-an-efficient-1030-nm-dbr-tapered-diode-laser
An efficient, 1030 nm distributed Bragg reflector (DBR) tapered diode laser with 10.5 W central lobe output power is presented. The laser is based on a tapered DBR grating for enhanced…
High power diode lasers converted to the visible
/en/research/publications/high-power-diode-lasers-converted-to-the-visible
High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking…
Coherent beam combining of high-power tapered amplifiers
/en/research/publications/coherent-beam-combining-of-high-power-tapered-amplifiers
We describe the coherent beam combining of three high-power tapered laser amplifiers seeded by a DFB laser at λ = 976 nm, and demonstrate a combined power of 12.9 W in a…
Generation of optical picosecond pulses with monolithic colliding-pulse mode-locked lasers containing a chirped double-quantum-well active region
/en/research/publications/generation-of-optical-picosecond-pulses-with-monolithic-colliding-pulse-mode-locked-lasers-containing-a-chirped-double-quantum-well-active-region
In this study, the authors present experimental results on 6 mm long monolithic passively colliding-pulse mode-locked (CPM) lasers. The AlGaAs-based devices with InxGa1-xAsyP1-y…
Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm
/en/research/publications/yellow-laser-emission-at-578-nm-by-frequency-doubling-with-diode-lasers-of-high-radiance-at-1156-nm
For the first time, we demonstrate diode lasers consisting of a single quantum-well, which emit at 1156 nm. Ridge waveguide lasers and tapered lasers of this structure contain a monolithically…
Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
/en/research/publications/metamorphic-al05ga05nsi-on-alnsapphire-for-the-growth-of-uvb-leds
In this paper we investigate the growth of metamorphic Al0.5Ga0.5N:Si on c-plane AlN/sapphire. The structural properties of the AlGaN:Si pseudo substrates and the electro-optical characteristics of…