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"Soup & Science" mit Dr. Katrin Paschke

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Die Physikerin Dr. Katrin Paschke entwickelt mit ihrem Team am FBH kompakte, streichholzschachtelgroße Lasersysteme. Wozu die notwendig sind und was sie an ihrer Arbeit fasziniert, darüber erzählt…

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

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Threading dislocations usually lead to inferior device performance. FBH now discovered that such defects can enhance sensitivity in AlGaN MSM photodetectors and allow for lower operation voltage.

Thermal and Electro-Thermal Modeling in Power Electronics: from Device, to Package, to System

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Thermal and Electro-Thermal Modeling in Power Electronics: from Device, to Package, to System Prof. Roberto Menozzi, PhDThe University of Parma

Optimization of GaN Microwave Power Amplifiers with Class-G Supply Modulation

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Optimization of GaN Microwave Power Amplifiers with Class-G Supply Modulation Nikolai WolffFerdinand-Braun-Institut, Berlin

Herausforderungen bei der praktischen Anwendung von GaN Leistungshalbleitern

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Herausforderungen bei der praktischen Anwendung von GaN Leistungshalbleitern Martin KrellmannBeaplas GmbH

FBH at Photonics West 2018

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You will find us at the Photonics West 2018 exhibition in San Francisco (USA) at the German Pavilion, booth 4529. The FBH is also well represented at the accompanying conferences (Bios, Lase,…

Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von GaN und Barium-Strontium-Titanate

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Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von GaN und Barium-Strontium-Titanate Sebastian PreisFerdinand-Braun-Institut Berlin

Full value chain – tailored diode lasers and UV LEDs

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FBH presents its capability in diode lasers and UV LEDs at the Photonics West 2018 trade show and the accompanying conferences. All devices are optimized to fit the respective application;…

Call for Abstracts: UV LEDs Technologies and Applications

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Abstract submission deadline: 15.12.2017

Gallium oxide MISFETs for power electronics applications

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Gallium oxide is a promising ultra-wide-bandgap semiconductor for future high-voltage power electronics applications due to its outstanding material properties. FBH has now successfully demonstrated…