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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/ sapphire
/en/research/publications/algan-based-deep-uv-leds-grown-on-sputtered-and-high-temperature-annealed-aln-sapphire
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed AlN/sapphire…
Compact RGBY light sources with high luminance for laser display applications
/en/research/publications/compact-rgby-light-sources-with-high-luminance-for-laser-display-applications
Watt-class visible laser light with a high luminance can be created with high-power GaAs-based lasers either directly in the red spectral region or using single-pass second harmonic generation (SHG)…
Chalmers GaN HEMT Charge Model Revisited
/en/research/publications/chalmers-gan-hemt-charge-model-revisited
This paper presents a charge modeling procedure based on the Chalmers GaN HEMT charge model. The impact of the transcapacitances in large-signal charge modeling is investigated. It is shown that the…
A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications
/en/research/publications/a-95-ghz-bandwidth-12-dbm-output-power-distributed-amplifier-in-inp-dhbt-technology-for-optoelectronic-applications
This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with…
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
/en/research/publications/influence-of-template-properties-and-quantum-well-number-on-stimulated-emission-from-al07ga03nal08ga02n-quantum-wells
AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates.…
Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice
/en/research/publications/ultrafast-carrier-dynamics-in-a-ganal018ga082n-superlattice
Relaxation processes of photoexcited carriers in a GaN/Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient…
Red-emitting distributed-feedback ridge-waveguide laser based on high-order surface grating
/en/research/publications/red-emitting-distributed-feedback-ridge-waveguide-laser-based-on-high-order-surface-grating
Distributed-feedback ridge-waveguide lasers emitting around 670 nm have been fabricated and experimentally characterised. Wavelength stabilisation is provided by 40th Bragg order surface…
Wavelength-Stabilized High-Pulse-Power Laser Diodes for Automotive LiDAR
/en/research/publications/wavelength-stabilized-high-pulse-power-laser-diodes-for-automotive-lidar
For automotive light detection and ranging (LiDAR) systems diode lasers emitting short optical pulses with a good beam quality and a low wavelength shift over a wide operating temperature range is…
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
/en/research/publications/diameter-evolution-of-selective-area-grown-ga-assisted-gaas-nanowires
Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon resulting from dynamics of the liquid droplet during growth and direct vapour-solid (VS) growth on the sidewall.…
Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers
/en/research/publications/asynchronous-sampling-terahertz-time-domain-spectroscopy-using-semiconductor-lasers
Asynchronous optical sampling terahertz time-domain spectroscopy using semiconductor laser-based ultra-short pulse sources is demonstrated. A pair of hybridly mode-locked edge-emitting external…