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Influence of the chip-heatsink thermal barrier on the brightness of high-power broad area diode lasers
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Improvements regarding the lateral beam quality of GaAs-based BA diode lasers strongly depend on the lateral temperature profile within the laser chip. FBH has recently made progress in understanding…
GeMiC 2018 - German Microwave Conference
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FBH at the German Microwave Conference
Brilliant high-power violet-emitting laser diodes – final presentation of project results
/en/research/research-news/brilliant-high-power-violet-emitting-laser-diodes-final-presentation-of-project-results
P. Perlin, TopGaN J.-H. Kang, Ferdinand-Braun-Institut P. Keshet, eagleyard Photonics GmbH
Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
/en/research/research-news/epitaxial-growth-and-characterization-of-gaas-based-type-ii-gainasgaassbgainas-w-quantum-well-heterostructures-and-lasers
Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers Dr. Christian FuchsPhilipps-University Marburg
Fresh from the press: frequent - FBH developments for space
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FBH's current frequent issue is available, dealing with FBH developments used in space, from pump laser benches applied in laser communication terminals to energy-efficient electronics for satellites.
Fresh from the press: frequent - wireless communications of the future
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The current frequent issue is available as printed and online version, dealing with next-generation wireless communications.
Effizienz- und Leistungssteigerung durch Epitaxie-Design Optimierungen in Breitstreifen-Diodenlasern
/en/research/research-news/effizienz-und-leistungssteigerung-durch-epitaxie-design-optimierungen-in-breitstreifen-diodenlasern
Effizienz- und Leistungssteigerung durch Epitaxie-Design Optimierungen in Breitstreifen-Diodenlasern Thorben KaulFerdinand-Braun-Institut, Berlin
Räumlich brillante kW-Klasse Diodenlaser-Barren
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Räumlich brillante kW-Klasse Diodenlaser-Barren Matthias KarowFerdinand-Braun-Institut, Berlin
GaN- a long way to go from crystal growth to substrates for reliable electronic devices: The effects of structural disturbances on the electrical behavior of GaN from a materials perspective
/en/research/research-news/gan-a-long-way-to-go-from-crystal-growth-to-substrates-for-reliable-electronic-devices-the-effects-of-structural-disturbances-on-the-electrical-behavior-of-gan-from-a-materials-perspective
GaN- a long way to go from crystal growth to substrates for reliable electronic devices: The effects of structural disturbances on the electrical behavior of GaN from a materials perspective Dr.…