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Electro-optical characteristics of 808nm ridge-waveguide lasers operated with high-current nanosecond pulses
/en/research/publications/electro-optical-characteristics-of-808nm-ridge-waveguide-lasers-operated-with-high-current-nanosecond-pulses
The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 808 nm under injection of 3 ns long…
Numerical study of high-power semiconductor lasers for operation at subzero temperatures
/en/research/publications/numerical-study-of-high-power-semiconductor-lasers-for-operation-at-subzero-temperatures
We present results on the impact of the Al-content in the waveguide structure on the electrooptical characteristics of 9xx nm, GaAs-based high-power lasers operated at room (300 K) and at sub-zero…
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
/en/research/publications/optically-pumped-dfb-lasers-based-on-gan-using-10th-order-laterally-coupled-surface-gratings
An optically pumped GaN-based laser structure with 10th-order laterally coupled surface grating is demonstrated. The fabrication involved i-line photolithography and dry etching, avoiding more…
Instabilities and Bifurcations of a DFB Laser Frequency-Stabilized by a High-Finesse Resonator
/en/research/publications/instabilities-and-bifurcations-of-a-dfb-laser-frequency-stabilized-by-a-high-finesse-resonator
Recently reported miniature configurations with semiconductor distributed feedback lasers under resonant feedback are considered theoretically. Limiting instabilities and bifurcations are…
Defect-Related Degradation of AlGaN-Based UV-B LEDs
/en/research/publications/defect-related-degradation-of-algan-based-uv-b-leds
This paper describes an extensive analysis of the degradation of (InAlGa)N-based UV-B light-emitting diodes (LEDs) submitted to constant current stress. This paper is based on combined electrical…
Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth
/en/research/publications/silicon-induced-defect-reduction-in-aln-template-layers-for-epitaxial-lateral-overgrowth
The effect of Si doping on defect density in AlN layers grown on sapphire was analysed. Si concentration in the range of 1019cm-3 leads to dislocation line inclination in AlN layers with a threading…
Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
/en/research/publications/gas-sensing-of-nitrogen-oxide-utilizing-spectrally-pure-deep-uv-leds
In this paper, we will present the development of a compact LED-based optical gas sensing system in the ultraviolet-C spectral region. This includes the design of the LED heterostruc- ture emitting…
The Digital Power Amplifier for the Wireless Infrastructure: Status and Prospects
/en/research/publications/the-digital-power-amplifier-for-the-wireless-infrastructure-status-and-prospects
In digital power amplifiers the analog signal is not handled directly but encoded in a pulse train. It is restored only at the output by a bandpass filter. Due to the discretization in amplitude,…
Method for in-depth characterization of electro-optic phase modulators
/en/research/publications/method-for-in-depth-characterization-of-electro-optic-phase-modulators
A flexible method to measure the modulation efficiency and residual amplitude modulation, including nonlinearities, of phase modulators is presented. The method is based on demodulation of the…
Autonomous frequency stabilization of two extended-cavity diode lasers at the potassium wavelength on a sounding rocket
/en/research/publications/autonomous-frequency-stabilization-of-two-extended-cavity-diode-lasers-at-the-potassium-wavelength-on-a-sounding-rocket
We have developed, assembled, and flight-proven a stable, compact, and autonomous extended-cavity diode laser (ECDL) system designed for atomic physics experiments in space. To that end, two…