IWN 2018
The FBH presents current research at the International Workshop on Nitride Semiconductors. Conference contributions with FBH participation:
- Growth and characterization of C-doped GaN
- Displacement Talbot Lithography for nano-engineering of III-nitride materials
- Optimizing free carrier compensation in HVPE and MBE epitaxial GaN films
- Degradation of AlGaN-based metal-semiconductor-metal photodetectors
- Physical model for the microstructural evolution in epitaxial AlN on sapphire uponhigh-temperature annealing
- Analysing extended defects in AlN and AlGaN quantum well structures grown on patterned sapphire substrates
- Impact of intermediate high temperature annealing on the properties of MOVPE grown AlN / sapphire templates
- Polarization fields in c-plane GaN /AlxGa1-x N/GaN quantum wells determined by capacitance-voltage-measurements
- Investigation of the optical polarization of AlGaN multiple quantum wells using photoluminescence spectroscopy
- Impact of temperature and current density on the degradation behavior of UVB LEDs
- Spectrally and spatially resolved micro-electroluminescence investigation of degradation effects in UV-B LEDs
- Temperature-dependent electroluminescence studies of AlGaN-based deep UV LEDs
- High power UVB light emitting diodes with optimized n-contact layers
- AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
- Exploring the Wavelength Limits of AlGaN-Based Deep UV LEDs
- Poster: UVB LED with narrow emission angle using advanced silicon-based reflector package and Fresnel lens
- Poster: TCAD of AlGaN/GaN HFET load pull measurements
- Poster: Collective behavior of injected excitons in GaN-based multi-quantum wells at threshold