Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
E. Vissers1,2, S. Poelman1,2, H. Wenzel3, H. Christopher3, K. van Gasse1,2, A. Knigge3, and B. Kuyken1,2
Published in:
Opt. Express, vol. 30, no. 23, pp. 42394-42405 (2022).
Abstract:
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum.
1 Photonics Research Group, Department of Information Technology, Ghent University IMEC, Ghent, B-9000, Belgium
2 Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent, Belgium
3 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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