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High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure

M. Elattar, O. Brox, P. Della Casa, A. Mogilatenko, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, and P. Crump

Published in:

28th International Semiconductor Laser Conference (ISLC 2022), Matsue, Japan, Oct. 16-19, ISBN: 978-4-88552-335-9, TuA-02 (2022).


We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using in-situ etching and epitaxial regrowth. Lateral leakage is tenfold reduced, for 30% lower threshold, higher peak efficiency, and improved beam parameters.

Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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