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Growth and FTIR Characterization of Two-Dimensional Hexagonal Boron Nitride on Metal Substrates
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Boris FeigelsonNaval Research Laboratory, USA
Wide Bandgap Semiconductor and Components Workshop
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FBH at the 7th Wide Bandgap Semiconductor and Components Workshop
75 mOhm / 600 V normally-off switching transistors on SiC and Si substrates
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GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. The FBH has now successfully transferred its 600 V technology for normally-off…
Digital Doherty Tx for Future SDR Mobile Infrastructures
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Digital power amplifier (PA) concepts are highly attractive, especially when it comes to optimizing wireless infrastructure. Processing all signals digitally up to the final stage would simplify the…
International Semiconductor Laser Conference
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Meet FBH scientists at the ISLC 2014.
A new approach for characterizing semiconductor laser diodes using LCR Impedance analyzer
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Dr. Ding LiPeking University
Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitations
/en/events/gate-dielectric-in-gan-based-metal-oxide-semiconductor-high-electron-mobility-transistors-an-overview-on-technology-issues-and-limitations
Mattia CapriottiTU Wien
Laser sources for atom interferometry in space
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Outer space offers optimum conditions for quantum optical experiments, since zero gravity is ideally suited to meet the stringent requirements on measurement accuracy and precision. However, until…
ESSDERC 2014
/en/events/essderc-2014
FBH presents the HIPOSWITCH project at the European Solid-State Device Conference