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Subsequent treatment of leafy vegetables with low doses of UVB-radiation does not provoke cytotoxicity, genotoxicity, or oxidative stress in a human liver cell model
/en/research/publications/subsequent-treatment-of-leafy-vegetables-with-low-doses-of-uvb-radiation-does-not-provoke-cytotoxicity-genotoxicity-or-oxidative-stress-in-a-human-liver-cell-model
Ultraviolet B (UVB) radiation in low but ecological-relevant doses acts as a regulator in the plant’s secondary metabolism. This study investigates the effect of UVB radiation from light-emitting…
Feedback Sensitivity of Detuned DBR Semiconductor Lasers
/en/research/publications/feedback-sensitivity-of-detuned-dbr-semiconductor-lasers-1
A distributed Bragg reflector (DBR) laser represents a simple realization of a semiconductor laser operating in a single longitudinal mode. We present a so far missing theoretical study how its…
High-Temperature Annealing and Patterned AlN/Sapphire Interfaces
/en/research/publications/high-temperature-annealing-and-patterned-alnsapphire-interfaces
Using the example of epitaxial lateral overgrowth of AlN on trench-patterned AlN/sapphire templates, the impact of introducing a high-temperature annealing step into the process chain is…
Mode-locked Cr:LiSAF laser far off the gain peak: tunable sub-200-fs pulses near 1 µm
/en/research/publications/mode-locked-crlisaf-laser-far-off-the-gain-peak-tunable-sub-200-fs-pulses-near-1-microm
We report, to the best of our knowledge, the first mode-locking results of a Cr:LiSAF laser near the 1 µmregion. The system is pumped only by a single 1.1 W high-brightness tapered…
A Polarization Switchable Antenna Switch Module for Ka-band Application
/en/research/publications/a-polarization-switchable-antenna-switch-module-for-ka-band-application
Operating at millimeter-wave or above has been the major trend for the next-generation wireless communication systems to acquire enough bandwidth. Consequently, antenna arrays with large number of…
Ten emitter dual-wavelength Y-branch DBR laser diode array emitting 1 W at 785 nm with a spectral emission width below 60 pm
/en/research/publications/ten-emitter-dual-wavelength-y-branch-dbr-laser-diode-array-emitting-1-w-at-785-nm-with-a-spectral-emission-width-below-60-pm
We present a 5 mm wide ten emitter dual-wavelength Y-branch DBR laser diode array emitting at 785 nm with an output power of 1 W at both wavelengths. The two emission wavelengths are…
Current Status of Carbon-Related Defect Luminescence in GaN
/en/research/publications/current-status-of-carbon-related-defect-luminescence-in-gan
Highly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact…
Compact 12×12-Pixel THz Camera using AlGaN/GaN HEMT Technology Operating at Room Temperature
/en/research/publications/compact-12x12-pixel-thz-camera-using-algangan-hemt-technology-operating-at-room-temperature
We report on a THz detector camera with a monolithically integrated 12×12 detector array of AlGaN/GaN TeraFETs. The camera operates in the range 100 GHz - 2 THz and is the first of…
An Efficient 400 GHz Active Multiplier-Based Signal Source for Terahertz Applications
/en/research/publications/an-efficient-400-ghz-active-multiplier-based-signal-source-for-terahertz-applications
This paper presents a 400 GHz signal source using a 0.8 µm transferred substrate (TS) InP-HBT technology. The signal source is based on an active balanced doubler and delivers…
Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
/en/research/publications/spatially-controlled-epitaxial-growth-of-2d-heterostructures-via-defect-engineering-using-a-focused-he-ion-beam
The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration,…