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Thermal stability of Pd/Zn and Pt based contacts to p- In0.53Ga0.47AsInP with various barrier layers
/en/research/publications/thermal-stability-of-pdzn-and-pt-based-contacts-to-p-in053ga047asinp-with-various-barrier-layers
Pd/Zn/Au contacts to p- In0.53Ga0.47AsInP with various types of barrier layers to the indiffusion of Au have been examined by Rutherford backscattering spectrometry (RBS). For the metallizations…
Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ = 1020 nm) ridge waveguide laser diodes
/en/research/publications/monomode-emission-at-350-mw-and-high-reliability-with-ingaasalgaas-l-1020-nm-ridge-waveguide-laser-diodes
3.35 mm long InGAs/GaAs/AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with…
Reliable high-power InGaAs/AlGaAs ridge waveguide laser diodes
/en/research/publications/reliable-high-power-ingaasalgaas-ridge-waveguide-laser-diodes
In application of RW laser diodes with monomode emission, like pumping sources for fibre amplifiers in optical communication systems, very high output powers are desirable. During the last years,…
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
/en/research/publications/real-time-monitoring-of-movpe-device-growth-by-reflectance-anisotropy-spectroscopy-and-related-optical-techniques
Reflectance anisotropy spectroscopy (RAS/RDS) so far has been mostly used for basic growth studies in both molecular beam epitaxy (MBE) and metal-organic vapor-phase epitaxy (MOVPE). Due to its…
Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy
/en/research/publications/growth-monitoring-of-gainpgaas-heterojunction-bipolar-transistors-by-reflectance-anisotropy-spectroscopy
Reflectance anisotropy spectroscopy (RAS) was applied as in situ probe during the growth of GaInP/GaAs heterojunction bipolar transistors (HBT) under production conditions, i.e. wafer rotation. The…
Application laboratories (ERDF)
/en/research/application-laboratories-erdf
Application laboratory for III-V components for aerospace The aerospace sector is gaining increasing importance for the economy, science, and security: It drives innovations in key technologies such…
Following Leibniz traces: smart people of today
/en/media-center/media-review/following-leibniz-traces-smart-people-of-today
In the Mosaik comic the Abrafaxes and the Ferdinand-Braun-Institut explain in a child-oriented way how a laser works, what makes it special and what it is used for.
Girls'Day
/en/career/pupils/girlsday
Since 2004, we have participated in Girls' Day every year and are pleased with the ongoing interest. Under the motto "A day as a microtechnologist - research with precision", schoolgirls in…
GCOPTICS 2024
/en/events/gcoptics-2024
The FBH presents its latest research findings in a contribution at the Global Conference on Optics, Photonics and Lasers.
In situ monitoring and control of InGaP growth on GaAs in MOVPE
/en/research/publications/in-situ-monitoring-and-control-of-ingap-growth-on-gaas-in-movpe
The growth of InGaP on GaAs was investigated and controlled by in situ reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE). In contrast to other III–V semiconductors, the…