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EuMW 2024
/en/events/eumw-2024
FBH is participating in the European Microwave Week with several contributions.
Telecom-Band Spontaneous Parametric Down-Conversion in AlGaAs-on-Insulator Waveguides
/en/research/publications/telecom-band-spontaneous-parametric-down-conversion-in-algaas-on-insulator-waveguides
Widespread commercial adoption of telecom-band quantum key distribution (QKD) will require fully integrated, room-temperature transmitters. Implementing highly efficient spontaneous parametric…
Book a Scientist
/en/events/book-a-scientist-1
Tim Schröder offers fascinating insights into the world of quantum technologies – at the exclusive speed dating event with science.
Advancements in characterization techniques for high-speed transistors
/en/research/research-news/advancements-in-characterization-techniques-for-high-speed-transistors
Our high-speed transistors are promising candidates for future wireless communication applications. We develop robust characterization techniques to extract reliable transistor parameters through 3D…
FiO LS 2024
/en/events/fio-ls-2024
The FBH will present latest research results at this year's FiO LS conference (Frontiers in Optics + Laser Science).
fit4nano 2024
/en/events/fit4nano-2024
The FBH will present its latest research results at the Focused Ion Technology for Nanomaterials Workshop in several contributions.
Videos
/en/media-center/media-library/videos
Take a look inside our state-of-the-art cleanroom laboratories – where high-end semiconductor chips are developed We show various areas of our cleanroom, where we manufacture high-performance…
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
/en/research/publications/special-topic-on-wide-and-ultrawide-bandgap-electronic-semiconductor-devices
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices J. Würfl1, T. Palacios2, H. Grace Xing3, Y. Hao4, and M. Schubert5 …
Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration
/en/research/publications/experimental-investigation-of-gan-on-alnsic-transistors-with-regard-to-monolithic-integration
The monolithic integration of the GaN-on-Si high-electron-mobility transistors (HEMTs) is challenging since the back-gating effects caused by a common substrate degrade the device’s performance. In…
Evolutionary Optimized, Monocrystalline Gold Double Wire Gratings as a Novel SERS Sensing Platform
/en/research/publications/evolutionary-optimized-monocrystalline-gold-double-wire-gratings-as-a-novel-sers-sensing-platform
Achieving reliable and quantifiable performance in large-area surface-enhanced Raman spectroscopy (SERS) substrates poses a formidable challenge, demanding signal enhancement while ensuring response…