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Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics
/en/research/publications/power-scaling-of-nonlinear-frequency-converted-tapered-diode-lasers-for-biophotonics
Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power…
High-Power Single-Mode Fiber Coupling of a Laterally Tapered Single-Frequency Diode Laser
/en/research/publications/high-power-single-mode-fiber-coupling-of-a-laterally-tapered-single-frequency-diode-laser
In this letter, we investigate experimentally singlemode fiber (SMF) coupling of a nondiffraction limited, astigmatic beam generated by a near-infrared distributed Bragg reflector tapered diode laser…
Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space
/en/research/publications/micro-integrated-extended-cavity-diode-lasers-for-precision-potassium-spectroscopy-in-space
We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the…
Normally-off GaN Transistors for Power Applications
/en/research/publications/normally-off-gan-transistors-for-power-applications
Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by…
Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices
/en/research/publications/bias-dependent-pospieszalski-noise-model-for-gan-hemt-devices
This paper proposes a new bias-dependent description for the Pospieszalski noise model for GaN HEMT devices. It is also proposed to replace the traditional description of the drain noise temperature…
A Compact GaN-MMIC Non-Uniform Distributed Power Amplifier for 2 to 12 GHz
/en/research/publications/a-compact-gan-mmic-non-uniform-distributed-power-amplifier-for-2-to-12-ghz
A non-uniform distributed power amplifier for the frequency range from 2 to 12 GHz is presented. The coplanar GaN MMIC has 1.8 × 2.4 mm2 chip size. It achieves over the whole frequency…
2.45 GHz ISM-Band RF-PA Demonstrator for GaN-HEMT optimization
/en/research/publications/245-ghz-ism-band-rf-pa-demonstrator-for-gan-hemt-optimization
In this work empirical results of an investigation aimed at improving GaN-HEMTs for higher frequency operation are presented. Two GaN-HEMT versions with nominal 60W output power and different…
Frequency doubling of a passively mode-locked monolithic distributed Bragg reflector diode laser
/en/research/publications/frequency-doubling-of-a-passively-mode-locked-monolithic-distributed-bragg-reflector-diode-laser
In this work, frequency doubling of a passively mode-locked 3.5 mm long monolithic distributed Bragg reflector diode laser is investigated experimentally. At 1064 nm, optical pulses with a…
Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm
/en/research/publications/dual-wavelength-master-oscillator-power-amplifier-diode-laser-system-at-785nbspnm
A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system…
Analysis of crystal orientation in AlN layers grown on m-plane sapphire
/en/research/publications/analysis-of-crystal-orientation-in-aln-layers-grown-on-m-plane-sapphire
Our study reports on the microstructure of AlN layers grown on m-plane sapphire by metal organic vapor phase epitaxy. We have found that AlN can nucleate with three different orientations on the m-…