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(Al,In)GaN-based LEDs & diode lasers
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In our cleanrooms we operate process lines to develop and fabricate (Al,In)GaN-based LEDs and diode lasers with different emission wavelengths. UVB and UVC LEDs use sapphire substrates, while…
Significant progress in coherent beam combining with diode lasers and tapered amplifiers at 808 nm
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We implemented for the first time the ridge waveguide section current for phase control in a novel coherent beam combining setup, achieving remarkably high combining efficiencies of > 80 % and an…
Custom modules
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Tailored laser sources and photonics modules for your individual application Laser sources are employed in the industry as non-destructive sensors, for illumination or direct material…
High precision micro integration
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Manufacture in sub-µ area With the help of our technology park, micro-integrated laser modules can be manufactured on request, which are unique in their field. We rely on a wealth of experience…
Module design
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Module design The specific requirements of the individual application areas demand precise module design. From microscopic simulations of individual assemblies to macroscopic influences of the…
Chip design and processing
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Chip design and processing The Laser Modules Lab develops specific laser modules for a wide range of applications. These laser modules are powered by specially designed laser diodes and…
Adlershof Thesis Award
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Jan Ruschel is nominated for the Adlershof Thesis Award. His talk and those of his two fellow candidates will be livestreamed.
Microtechnologist
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Microtechnologists work in the semiconductor industry, in research institutions or universities. They produce things that everyone uses every day, but hardly anyone notices. Whether PCs, cell…
Paving the way for next-generation power converters – processes towards vertical GaN and β-Ga2O3 FinFETs
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FBH is developing the process technology to realize vertical fin field-effect transistors based on GaN and β-Ga2O3. The device concept is a promising approach for next-generation highly efficient…
Enabling technologies for more compact InP devices and system integration
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An advanced InP HBT MMIC process yielded a stable node size of 300 nm with alignment quality of <20 nm. A system integration concept (using a low-temperature flip-chip process) has also…