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New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery
/en/research/publications/new-degradation-mechanism-observed-for-algangan-hemts-with-sub-100nbspnm-scale-unpassivated-regions-around-the-gate-periphery
AlGaN/GaN HEMTs with low gate leakage current in the µA/mm range have been fabricated with a small- unpassivated region close to the gate foot. They showed considerably higher critical voltage values…
STE-QUEST-test of the universality of free fall using cold atom interferometry
/en/research/publications/ste-quest-test-of-the-universality-of-free-fall-using-cold-atom-interferometry
The theory of general relativity describes macroscopic phenomena driven by the influence of gravity while quantum mechanics brilliantly accounts for microscopic effects. Despite their tremendous…
Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits
/en/research/publications/three-dimensional-inp-dhbt-on-sige-bicmos-integration-by-means-of-benzocyclobutene-based-wafer-bonding-for-mm-wave-circuits
In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies we have employed three-dimensional (3D) Benzocyclobutene (BCB)-based wafer bonding integration scheme. A…
Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology
/en/research/publications/millimeter-wave-hetero-integrated-sources-in-inp-on-bicmos-technology
The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled…
Small- and large-signal modeling of InP HBTs in transferred-substrate technology
/en/research/publications/small-and-large-signal-modeling-of-inp-hbts-in-transferred-substrate-technology
In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit…
Yield Improvement of Metal-insulator-metal Capacitors in MMIC Fabrication Process Based on AlGaN/GaN HFETs
/en/research/publications/yield-improvement-of-metal-insulator-metal-capacitors-in-mmic-fabrication-process-based-on-algangan-hfets
This contribution deals with the metal-insulator-metal (MIM) capacitor yield improvement in a GaN-based MMICs fabrication process. High MIM capacitor yield is one of the prerequisites for the…
400 mW external cavity diode laser with narrowband emission at 445 nm
/en/research/publications/400nbspmw-external-cavity-diode-laser-with-narrowband-emission-at-445nbspnm
A high-power external cavity diode laser (ECDL) system with narrowband emission is presented. The system is based on a commercially available high-power GaN laser diode. For the ECDL, a maximum…
Digital Doherty Transmitter with Envelope ΔΣ Modulated Class-D GaN Power Amplifier for 800 MHz band
/en/research/publications/digital-doherty-transmitter-with-envelope-ds-modulated-class-d-gan-power-amplifier-for-800nbspmhz-band
This paper presents a novel transmitter (Tx) architecture combining voltage-mode class-D power amplifiers (PAs) with an efficient 1-bit envelope delta-sigma modulation scheme for the 800 MHz…
Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth
/en/research/publications/defect-analysis-in-algan-layers-on-aln-templates-obtained-by-epitaxial-lateral-overgrowth
The defect distribution in thick AlN layers obtained by epitaxial lateral overgrowth (ELO-AlN) has been analyzed as a function of the miscut direction of the patterned sapphire substrate. A 0.25°…
Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals
/en/research/publications/generation-of-35-w-of-diffraction-limited-green-light-from-shg-of-a-single-tapered-diode-laser-in-a-cascade-of-nonlinear-crystals
Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode…