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Applications
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Our diode lasers, UV LEDs as well as the modules and systems built with them are used in a wide range of applications. Here are some examples: engl. Anwendungen: Weltraum, Raman, ... Pump…
Technologies & Processes
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We offer a wide range of technologies and reproducible processes to manufacture gallium arsenide laser diodes with defined properties. If required, we introduce grating structures into the laser…
Laser & UV-LED-Systems
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Our devices and modules are used in a wide variety of industrial and research applications. To make them usable for applications, we integrate them into suitable packages, equip them with fiber…
Diode Laser & UV-LED Modules
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We offer the complete value chain in chip development in-house and also assemble our diode laser and UV LED chips into modules tailored to customer needs. Whether high power and efficiency, tunable…
Research
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Photonik, IQT, Elektronik, Technologie Photonics Integrated Quantum Technology III-V Electronics III-V Technology Forschungsnews Researchnews Latest research news from…
About us
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The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is an application-oriented research institute in the fields of high-frequency electronics, photonics and quantum…
Wavelength stabilized diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications
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FBH succeeded in fabricating a GaAs-based distributed Bragg reflector laser with an enhanced slope efficiency. To achieve this, two tunnel junctions and three active regions were placed into the…
Hot off the press - frequent "FBH developments for space"
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For more than 20 years, we have been supplying partners in industry and science with customized solutions for space applications. An overview of our current developments provides the new frequent…
Hot off the press: FBH's annual report
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with the most important events and results achieved in the years 2020 and 2021.
Basis for improved UV LEDs – high-quality aluminum nitride by high-temperature annealing
/en/research/research-news/basis-for-improved-uv-leds-high-quality-aluminum-nitride-by-high-temperature-annealing
The combination of high-temperature annealing with epitaxial growth on a sapphire surface results in aluminum nitride base layers with very low defect density. This increases the light emission and…