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Search results 551 until 560 of 4072

Characterization of InxGa1-xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction

/en/research/publications/characterization-of-inxga1-xas-single-quantum-wells-buried-in-gaas9100193-by-grazing-incidence-diffraction

The depth profile of the chemical composition in InxGa1-xAs single quantum wells (SQWs), epitaxially grown onto a GaAs[001] substrate and covered by a GaAs cap layer, has been determined by…

Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy

/en/research/publications/evaluation-of-strained-ingaasgaas-quantum-wells-by-atomic-force-microscopy

Atomic force microscopy (AFM) is adopted for evaluation of strained InGaAs/GaAs quantum well structures grown by metalorganic vapor phase epitaxy. InAs-rich clusters are formed at the upper interface…

Comparison of Ti/Pt/Au and Ti/Ru/Au contact systems to p-type InGaP

/en/research/publications/comparison-of-tiptau-and-tiruau-contact-systems-to-p-type-ingap

The electrical and metallurgical properties of vacuum-evaporated Ti/Pt/Au and Ti/Ru/Au contacts to moderately doped p-type InGaP (p ∼ 3 × 1018 cm−3) and their…

Structure and stability studies on W, WSi, WSiN/GaAs systems by XRD

/en/research/publications/structure-and-stability-studies-on-w-wsi-wsingaas-systems-by-xrd

The microstructural properties of tungsten, tungsten silicide and tungsten silicide nitride layers on GaAs were studied by thin film x-ray diffraction and correlated with deposition parameters,…

Low resistance (~1x10-6 cm-2) Au/Ge/Pd ohmic contact to n-Al0.5In0.5P

/en/research/publications/low-resistance-1x10-6-cm-2-augepd-ohmic-contact-to-n-al05in05p

A Au (1000 Å)/Ge (100 Å)/Pd (100 Å) contact scheme has been investigated to form low resistance Ohmic contact to n-Al0.5In0.5P (E g =2.3 eV) with a minimum contact resistivity of…

Modelling of edges and corners in the alternating transmission line matrix (ATLM) scheme

/en/research/publications/modelling-of-edges-and-corners-in-the-alternating-transmission-line-matrix-atlm-scheme

An improved scattering matrix for modelling edge and corner nodes with the alternating transmission line matrix (ATLM) method is presented. ATLM simulations with new edge and corner nodes show much…

Optimum Mesh Grading for Finite-Difference Method

/en/research/publications/optimum-mesh-grading-for-finite-difference-method

The coarseness error of the finite-difference (FD) method is studied analyzing a typical planar waveguide and a rectangular coaxial geometry. Results for equidistant and graded mesh are compared in…

Three-Dimensional Full-Vector Analysis of Optical Waveguides by Finite-Integration Beam-Propagation Method (FIBPM)

/en/research/publications/three-dimensional-full-vector-analysis-of-optical-waveguides-by-finite-integration-beam-propagation-method-fibpm

In the paper a novel finite-integration beam-propagation method (FIBPM) is presented. This method is especially suited for the simulation of optical waveguides containing extremely thin layers of…

A coplanar 38-GHz SiGe MMIC oscillator

/en/research/publications/a-coplanar-38-ghz-sige-mmic-oscillator

Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a…

High-impedance coplanar waveguides with low attenuation

/en/research/publications/high-impedance-coplanar-waveguides-with-low-attenuation

The conventional MMIC coplanar line covers an impedance range from about 30-80 Ω. Values outside this range cannot be fabricated reliably or cause excessive losses, For several applications, however,…