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Search results 581 until 590 of 4018

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3

/en/research/publications/band-gap-renormalization-and-burstein-moss-effect-in-silicon-and-germanium-doped-wurtzite-gan-up-to-1020nbspcm-3

The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6×1020 cm-3…

Impact of electron irradiation on electron holographic potentiometry

/en/research/publications/impact-of-electron-irradiation-on-electron-holographic-potentiometry

While electron holography in the transmission electron microscope offers the possibility to measure maps of the electrostatic potential of semiconductors down to nanometer dimensions, these…

Compact Blue Light Source by Single-Pass Second Harmonic Generation of DBR Tapered Laser Radiation

/en/research/publications/compact-blue-light-source-by-single-pass-second-harmonic-generation-of-dbr-tapered-laser-radiation

We demonstrate a continuous-wave 460-nm compact visible laser module having a footprint of 75 mm × 25 mm × 25 mm. This blue light source is achieved through single-pass second harmonic…

Nano-optical analysis of GaN-based diode lasers

/en/research/publications/nano-optical-analysis-of-gan-based-diode-lasers

Near-field scanning optical microscopy (NSOM) is applied for analyzing GaN-based diode lasers. The measurements are carried out at the front facets of standard devices without any additional…

Studies of limitations to lateral brightness in high power diode lasers using spectrally-resolved mode profiles

/en/research/publications/studies-of-limitations-to-lateral-brightness-in-high-power-diode-lasers-using-spectrally-resolved-mode-profiles

Efficient DFB broad-area lasers enable spectrally-resolved measurements of lateral field profiles to high powers, indicating brightness is limited by both increasing numbers of guided modes and…

Design optimisation of high-brightness laser diodes for external cavity operation in the BRIDLE project

/en/research/publications/design-optimisation-of-high-brightness-laser-diodes-for-external-cavity-operation-in-the-bridle-project

We report on the design aspects of high performance diode lasers for application in high-brightness spectral beam combining and coherent beam combining modules. Key performance trade-offs are…

Experimental Investigation of Limits to Slow Axis Beam Quality in High Power Broad Area Diode Lasers

/en/research/publications/experimental-investigation-of-limits-to-slow-axis-beam-quality-in-high-power-broad-area-diode-lasers

An experimental study of factors limiting lateral beam parameter product (BPP) in broad area lasers is presented. BPP is an approximately linear function of self-heating, whose dependence on design,…

Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating

/en/research/publications/factors-influencing-brightness-and-beam-quality-of-conventional-and-distributed-bragg-reflector-tapered-laser-diodes-in-absence-of-self-heating

In this study, the authors examine some of the factors affecting the brightness and the beam quality of high-power tapered lasers. The large volume resonators required to achieve high-power,…

Design of Waveguide Manifold Multiplexers with Dual-Mode Filters Using Distributed Models

/en/research/publications/design-of-waveguide-manifold-multiplexers-with-dual-mode-filters-using-distributed-models

A novel multiplexer design technique which makes use of distributed models is proposed. For the first time, dis- tributed models of dual mode filters are applied to the design of manifold…

Highly Efficient 200-GHz Fixed-Frequency Fundamental Source in Transferred-Substrate InP DHBT Technology

/en/research/publications/highly-efficient-200-ghz-fixed-frequency-fundamental-source-in-transferred-substrate-inp-dhbt-technology

A 197-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate InP-DHBT process. It delivers 0 dBm output power, with a phase noise of -88…