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Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties
/en/research/publications/ohmic-pdznaulab6au-contacts-on-p-type-in053ga047as-electrical-and-metallurgical-properties
The development of a shallow and low-resistive contact on moderately doped (p≈5×1018 cm-3 In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional…
Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems
/en/research/publications/low-resistance-thermally-stable-aupttiwsin-ohmic-contacts-on-n-ingaasn-gaas-layer-systems
The electrical properties of the ohmic contact systems Au/Pt/Ti/WSiN and Au/Pt/Ti to n+-InGaAs/GaAs layers grown by metalorganic vapor phase epitaxy were investigated and compared to each other. The…
Review and experimental benchmarking of machine learning algorithms for efficient optimization of cold atom experiments
/en/research/publications/review-and-experimental-benchmarking-of-machine-learning-algorithms-for-efficient-optimization-of-cold-atom-experiments
The generation of cold atom clouds is a complex process which involves the optimization of noisy data in high dimensional parameter spaces. Optimization can be challenging both in and especially…
‘Sawfish’ Photonic Crystal Cavity for Near-Unity Emitter-to-Fiber Interfacing in Quantum Network Applications
/en/research/publications/sawfish-photonic-crystal-cavity-for-near-unity-emitter-to-fiber-interfacing-in-quantum-network-applications
Photon loss is one of the key challenges to overcome in complex photonic quantum applications. Photon collection efficiencies directly impact the amount of resources required for measurement-based…
Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
/en/research/publications/overlapping-source-field-plate-process-module-for-high-voltage-gan-hfets-with-low-off-state-leakage-currents
GaN-based high-voltage HFETs have been fabricated using single source-connected field plates. The device breakdown voltage was as high as 2370 V for 15.5 μm gate drain separation. A…
Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
/en/research/publications/wafer-bow-tuning-with-stealth-laser-patterning-for-vertical-high-voltage-devices-with-thick-gan-epitaxy-on-sapphire-substrates
In this work we present a systematic study on a novel method to reduce the very strong bow of 4-inch GaN-on-sapphire wafers with more than 15 μm thick epitaxy. Laser scribing of the epitaxial…
DRIP XX
/en/events/drip-xx
The FBH is participating in the 20th International Conference on Defects – Recognition, Imaging, and Physics in Semiconductors with a conference contribution created in cooperation with the MBI.
Defect Reduction and Yield Improvement of MIM Capacitors
/en/research/publications/defect-reduction-and-yield-improvement-of-mim-capacitors
The aim of this work is to observe and analyze strain related effects in MIM capacitor structures that lead to a degradation of fabrication yield. Our results indicate that the strain difference…
Subtractive WSiN thin film resistors for RF GaN and InP MMICs
/en/research/publications/subtractive-wsin-thin-film-resistors-for-rf-gan-and-inp-mmics
In this study, WSiN-based thin film resistors are implemented and characterized as an alternative to NiCr-based resistors in GaN and InP MMICs. This approach simplifies the fabrication process by…
AVS ALD/ALE 2024
/en/events/avs-aldale-2024
FBH will be presenting its latest research findings at the AVS 24th International Conference on Atomic Layer Deposition (ALD 2024) featuring the 11th International Atomic Layer Etching Workshop (ALE…