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Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown
/en/research/publications/degradation-of-algangan-high-electron-mobility-transistors-in-the-current-controlled-off-state-breakdown
We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state…
Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures
/en/research/publications/surface-topology-caused-by-dislocations-in-polar-semipolar-and-nonpolar-ingangan-heterostructures
The impact of dislocations on surface topology as well as on quantum well emission in c-plane, semipolar, and nonpolar InGaN/GaN heterostructures is being analyzed by microphotoluminescence and…
Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
/en/research/publications/hydride-vapor-phase-epitaxy-of-c-plane-algan-layers-on-patterned-sapphire-substrates
Growth of AlxGa1-xN layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the…
Implementation of Slanted Sidewall Gates Technology in the Fabrication of S-, X-, and Ka-band AlGaN/GaN HEMTs
/en/research/publications/implementation-of-slanted-sidewall-gates-technology-in-the-fabrication-of-s-x-and-ka-band-algangan-hemts
Currently the so-called "embedded gate process" where the gate is processed into an insulator trench is commonly used for AlGaN/GaN HEMT gate fabrication. In this work we present a new…
Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability
/en/research/publications/sputtered-iridium-gate-module-for-gan-hemt-with-stress-engineering-and-high-reliability
A new gate module with iridium as a degradation resistant Schottky contact for GaN based HEMT devices is developed. Conformal deposition of Schottky and barrier metal in the gate trench provides…
In-situ curvature measurements applied to MOVPE-based growth of edge-emitting diode lasers
/en/research/publications/in-situ-curvature-measurements-applied-to-movpe-based-growth-of-edge-emitting-diode-lasers
We apply in-situ curvature measurements to GaAs/AlGaAs based edge emitting diode laser growth. Along with an increased overall AlGaAs thickness the room temperature convex wafer bow increases as…
SiC and GaN devices - wide bandgap is not all the same
/en/research/publications/sic-and-gan-devices-wide-bandgap-is-not-all-the-same
Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and…
Diode lasers at 626 nm for quantum information processing
/en/research/publications/diode-lasers-at-626nbspnm-for-quantum-information-processing
AlGaInP based diode lasers with an emission wavelength at 626 nm were developed. The lasers feature sufficient output power and spectral radiance to perform experiments for quantum information…
High power, narrow linewidth, micro-integrated semiconductor laser modules designed for quantum sensors in space
/en/research/publications/high-power-narrow-linewidth-micro-integrated-semiconductor-laser-modules-designed-for-quantum-sensors-in-space
We developed a very robust diode laser module platform for the deployment of cold atom based quantum sensors in space. The micro optical benches not larger than 80 × 25mm2 host MOPA and…
1.9 W continuous-wave single transverse mode emission from 1060nm edge-emitting lasers with vertically extended lasing area
/en/research/publications/19-w-continuous-wave-single-transverse-mode-emission-from-1060nm-edge-emitting-lasers-with-vertically-extended-lasing-area
High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 µm…