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Hochleistungsdiodenlaserverstärker
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Hochleistungsdiodenlaserverstärker Xiaozhuo WangFerdinand-Braun-Institut, Leibniz-Institut für Hoechstfrequenztechnik 26.11.2010 (in German)
FBH at RadioTecC
/en/events/fbh-at-radiotecc
The FBH presents two lectures on GaN power devices and RF power amplifiers at the RadioTecC fair.
Erhöhung der Konversionseffizienz bei der Frequenzverdopplung von Diodenlasern
/en/events/erhoehung-der-konversionseffizienz-bei-der-frequenzverdopplung-von-diodenlasern
Erhöhung der Konversionseffizienz bei der Frequenzverdopplung von Diodenlasern Daniel JedrzejczykFerdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik 03.12.2010 (in German)
Diode pumped solid-state lasers in the near infrared and visible spectral region
/en/events/diode-pumped-solid-state-lasers-in-the-near-infrared-and-visible-spectral-region
Diode pumped solid-state lasers in the near infrared and visible spectral region Prof. Günter HuberUniversitaet Hamburg 10.12.2010
Advancing on-wafer measurement calibration at W-band
/en/research/research-news/advancing-on-wafer-measurement-calibration-at-w-band
For the characterization of integrated circuits probes are used which deteriorate the measurement result – especially in higher frequency ranges. To correct these parasitic effects a calibration…
940 nm QCW Pump Modules for 6 kW out of Fiber
/en/research/research-news/940-nm-qcw-pump-modules-for-6-kw-out-of-fiber
The FBH developed fiber coupled pump modules for high repetition rate chirped pulse amplification thin disk lasers of the Joule class. The diode laser pump modules are designed to emit 6 kW,…
International Workshop on Nitride Semiconductors
/en/events/international-workshop-on-nitride-semiconductors
FBH contributes with several lectures and posters to the IWN 2014.
UV laser scribing for die separation of GaN-based lasers
/en/research/research-news/uv-laser-scribing-for-die-separation-of-gan-based-lasers
At FBH nanosecond-pulsed laser radiation (pulse length < 30 ns) with a wavelength of 355 nm is successfully used to scribe the material followed by cleaving. At 355 nm GaN absorbs,…
Growth and FTIR Characterization of Two-Dimensional Hexagonal Boron Nitride on Metal Substrates
/en/research/research-news/growth-and-ftir-characterization-of-two-dimensional-hexagonal-boron-nitride-on-metal-substrates
Boris FeigelsonNaval Research Laboratory, USA
Wide Bandgap Semiconductor and Components Workshop
/en/events/wide-bandgap-semiconductor-and-components-workshop
FBH at the 7th Wide Bandgap Semiconductor and Components Workshop