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3. Status Seminar of the InnoProfile Group
/en/events/3-status-seminar-of-the-innoprofile-group
One focus of the seminar is on the transfer of FBH's laser systems concept in the Watt range by frequency doubling from 488 nm to further wavelengths.
Photonic Bandgap Crystal Laser
/en/events/photonic-bandgap-crystal-laser
Photonic Bandgap Crystal Laser Kristijan PosilovicTU Berlin 19.11.2010
Hochleistungsdiodenlaserverstärker
/en/events/hochleistungsdiodenlaserverstaerker
Hochleistungsdiodenlaserverstärker Xiaozhuo WangFerdinand-Braun-Institut, Leibniz-Institut für Hoechstfrequenztechnik 26.11.2010 (in German)
FBH at RadioTecC
/en/events/fbh-at-radiotecc
The FBH presents two lectures on GaN power devices and RF power amplifiers at the RadioTecC fair.
Erhöhung der Konversionseffizienz bei der Frequenzverdopplung von Diodenlasern
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Erhöhung der Konversionseffizienz bei der Frequenzverdopplung von Diodenlasern Daniel JedrzejczykFerdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik 03.12.2010 (in German)
Diode pumped solid-state lasers in the near infrared and visible spectral region
/en/events/diode-pumped-solid-state-lasers-in-the-near-infrared-and-visible-spectral-region
Diode pumped solid-state lasers in the near infrared and visible spectral region Prof. Günter HuberUniversitaet Hamburg 10.12.2010
Advancing on-wafer measurement calibration at W-band
/en/research/research-news/advancing-on-wafer-measurement-calibration-at-w-band
For the characterization of integrated circuits probes are used which deteriorate the measurement result – especially in higher frequency ranges. To correct these parasitic effects a calibration…
940 nm QCW Pump Modules for 6 kW out of Fiber
/en/research/research-news/940-nm-qcw-pump-modules-for-6-kw-out-of-fiber
The FBH developed fiber coupled pump modules for high repetition rate chirped pulse amplification thin disk lasers of the Joule class. The diode laser pump modules are designed to emit 6 kW,…
International Workshop on Nitride Semiconductors
/en/events/international-workshop-on-nitride-semiconductors
FBH contributes with several lectures and posters to the IWN 2014.
UV laser scribing for die separation of GaN-based lasers
/en/research/research-news/uv-laser-scribing-for-die-separation-of-gan-based-lasers
At FBH nanosecond-pulsed laser radiation (pulse length < 30 ns) with a wavelength of 355 nm is successfully used to scribe the material followed by cleaving. At 355 nm GaN absorbs,…