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Single mode 660 nm master-oscillator power-amplifier with 500 mW optical output power
/en/research/publications/single-mode-660-nm-master-oscillator-power-amplifier-with-500-mw-optical-output-power
Single mode 660 nm master-oscillator power-amplifier with 500 mW optical output power G. Blume, C. Kaspari, J. Pohl, D. Feise, H. Wenzel, J. Fricke, P. Ressel,…
Translation of SERS Sensing to Real-World Settings through the Combination with Shifted-Excitation Raman Difference Spectroscopy (SERDS)
/en/research/publications/translation-of-sers-sensing-to-real-world-settings-through-the-combination-with-shifted-excitation-raman-difference-spectroscopy-serds
Translation of SERS Sensing to Real-World Settings through the Combination with Shifted-Excitation Raman Difference Spectroscopy (SERDS) P. Strobbiaa,b,#, V. Cupil-Garciaa,c,…
Optical clock technologies for global navigation satellite systems
/en/research/publications/optical-clock-technologies-for-global-navigation-satellite-systems
Future generations of global navigation satellite systems (GNSSs) can benefit from optical technologies. Especially optical clocks could back-up or replace the currently used microwave clocks, having…
Noninvasive measurement of the 308 nm LED-based UVB protection factor of sunscreens
/en/research/publications/noninvasive-measurement-of-the-308-nm-led-based-uvb-protection-factor-of-sunscreens
The current method for determining the sun protection factor (SPF) requires erythema formation. Noninvasive alternatives have recently been suggested by several groups. Our group previously developed…
Improved lateral brightness in 940-nm high-power broad-area diode lasers using enhanced self-aligned structure
/en/research/publications/improved-lateral-brightness-in-940-nm-high-power-broad-area-diode-lasers-using-enhanced-self-aligned-structure
We present high-power broad-area diode lasers with improved beam quality, reduced threshold current, and increased efficiency, realized by implementing an enhanced self-aligned lateral structure.
Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET
/en/research/publications/threshold-voltage-shift-induced-by-intrinsic-stress-in-gate-metal-of-algangan-hfet
Mechanical stress/strain is altering the charging properties of piezoelectric materials. For AlGaN and GaN heterostructures, this phenomenon has been described theoretically (Ambacher et al 2000 J.…
Prototype of a compact rubidium-based optical frequency reference for operation on nanosatellites
/en/research/publications/prototype-of-a-compact-rubidium-based-optical-frequency-reference-for-operation-on-nanosatellites
Space-borne optical frequency references based on spectroscopy of atomic vapors may serve as an integral part of compact optical atomic clocks, which can advance global navigation systems or can be…
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
/en/research/publications/origin-of-defect-luminescence-in-ultraviolet-emitting-algan-diode-structures
Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy…
Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
/en/research/publications/novel-900-nm-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions
A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the…
A 52-58 GHz Power Amplifier With 18.6-dBm Saturated Output Power for Space Applications
/en/research/publications/a-52-58-ghz-power-amplifier-with-186-dbm-saturated-output-power-for-space-applications
This brief presents a 52-58 GHz power amplifier (PA) with constant output power across the entire band. A new topology based on the impedance transformation of transmission lines was adopted as the…