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Application of 280nm In-Situ Metrology to study the Influence of AlN Templates on Surface Roughness and Strain Effects in UVA/UVB LEDs
/en/research/publications/application-of-280nm-in-situ-metrology-to-study-the-influence-of-aln-templates-on-surface-roughness-and-strain-effects-in-uvauvb-leds
Traditional in-situ reflectometry sensing at blue (405 nm), red (630 nm) and NIR (950 nm) wavelengths cannot resolve variations in InAlGaN surface roughness or layer thickness with the…
The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB-LED Structures
/en/research/publications/the-impact-of-aln-templates-on-strain-relaxation-mechanisms-during-the-movpe-growth-of-uvb-led-structures
Strain relaxation mechanisms in AlGaN based light emitting diodes emitting in the ultraviolet B spectral range (UVB-LEDs) grown on different AlN/sapphire templates are analyzed by combining in situ…
Hyperspectral terahertz imaging with electro-optic dual combs and a FET-based detector
/en/research/publications/hyperspectral-terahertz-imaging-with-electro-optic-dual-combs-and-a-fet-based-detector
In this paper, a terahertz hyperspectral imaging architecture based on an electro-optic terahertz dual-comb source is presented and demonstrated. In contrast to single frequency sources, this…
Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
/en/research/publications/milliwatt-power-233nbspnm-algan-based-deep-uv-leds-on-sapphire-substrates
Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9±0.3) mW and an external quantum efficiency of (0.36±0.07) % at 100 mA are presented. The…
Microsecond pulse-mode operation of a micro-integrated high-power external-cavity tapered diode laser at 808 nm
/en/research/publications/microsecond-pulse-mode-operation-of-a-micro-integrated-high-power-external-cavity-tapered-diode-laser-at-808nbspnm
We investigate microsecond pulse-mode operation of a micro-integrated high-power diode laser based on volume Bragg grating external-cavity feedback around 808 nm. The laser system contains a…
The 2020 UV emitter roadmap
/en/research/publications/the-2020-uv-emitter-roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm - due…
Micro-Integrated Laser Modules for Optical Clocks
/en/research/publications/micro-integrated-laser-modules-for-optical-clocks
A micro-integrated laser module has been developed for the deployment in a compact, transportable 171Yb+ optical clock. With this laser module, the clock laser system demonstrated a Modified Allan…
High-brightness wavelength stabilized diode lasers for sensor systems and non-linear frequency conversion
/en/research/publications/high-brightness-wavelength-stabilized-diode-lasers-for-sensor-systems-and-non-linear-frequency-conversion
High-brightness wavelength stabilized diode lasers emitting between 750nm and 1100nm with output powers up to 15W for sensor applications such as biomedical imaging and spectroscopy as well as for…
In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation
/en/research/publications/in-situ-spectroscopic-analysis-of-the-recombination-kinetics-in-uvb-leds-during-their-operation
The recombination kinetics in the quantum well (QW) active region of ultraviolet light emitting diodes have been measured in situ during device operation. Non-radiative recombination is enhanced with…
D-band Point to Multi-Point Deployment with G-Band Transport
/en/research/publications/d-band-point-to-multi-point-deployment-with-g-band-transport
The first Point to Multi Point wireless system at D-band has been designed and is in advanced development. The European Commission H2020 ULTRAWAVE "Ultra capacity wireless layer beyond…