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Advancing on-wafer measurement calibration at W-band
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For the characterization of integrated circuits probes are used which deteriorate the measurement result – especially in higher frequency ranges. To correct these parasitic effects a calibration…
940 nm QCW Pump Modules for 6 kW out of Fiber
/en/research/research-news/940-nm-qcw-pump-modules-for-6-kw-out-of-fiber
The FBH developed fiber coupled pump modules for high repetition rate chirped pulse amplification thin disk lasers of the Joule class. The diode laser pump modules are designed to emit 6 kW,…
International Workshop on Nitride Semiconductors
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FBH contributes with several lectures and posters to the IWN 2014.
UV laser scribing for die separation of GaN-based lasers
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At FBH nanosecond-pulsed laser radiation (pulse length < 30 ns) with a wavelength of 355 nm is successfully used to scribe the material followed by cleaving. At 355 nm GaN absorbs,…
Growth and FTIR Characterization of Two-Dimensional Hexagonal Boron Nitride on Metal Substrates
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Boris FeigelsonNaval Research Laboratory, USA
Wide Bandgap Semiconductor and Components Workshop
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FBH at the 7th Wide Bandgap Semiconductor and Components Workshop
75 mOhm / 600 V normally-off switching transistors on SiC and Si substrates
/en/research/research-news/75-mohm-600-v-normally-off-switching-transistors-on-sic-and-si-substrates
GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. The FBH has now successfully transferred its 600 V technology for normally-off…
Digital Doherty Tx for Future SDR Mobile Infrastructures
/en/research/research-news/digital-doherty-tx-for-future-sdr-mobile-infrastructures
Digital power amplifier (PA) concepts are highly attractive, especially when it comes to optimizing wireless infrastructure. Processing all signals digitally up to the final stage would simplify the…
International Semiconductor Laser Conference
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Meet FBH scientists at the ISLC 2014.