International Workshop on Nitride Semiconductors
FBH presents the following lectures at the IWN 2014:
- F. Brunner: Semipolar (11-22) GaN templates grown on 100 mm trench-patterned r-plane sapphire
- A. Knigge: Al0.4Ga0.6N metal-semiconductor-metal photodetectorson epitaxial laterally overgrown AlN/Sapphire templates
Posters:
- A. Knauer - Defect Generation due to Composition Fluctuations at Surface Steps in MOVPE grown Al0.5Ga0.5N on ELO AlN
- A. Knigge - Solar-blind AlGaN Schottky Photodetectors for soft X-ray Radiation Measurement
- M. Brendel - Top- and Bottom-Illumination of Solar-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
- E. Gridneva - Optimization of HVPE GaN growth: effect of carrier gas and species distribution on material properties
- J. Jeschke - The Influence of T, p and V/III Ratio on Morphology and Growth Rate of MOVPE AlGaN/AlN MQWs for Deep UV Light Emitters
- A. Mogilatenko - Structural and optical properties of AlGaN layers grown on AlN templates obtained by epitaxial lateral overgrowth
- A. Mogilatenko - Microstructure of AlN layers grown on m-plane sapphire by metalorganic vapor phase epitaxy
- Y.H. Lu - Lateral epitaxial overgrowth of AlN for AlGaN-based ultraviolet light-emitting diodes
- V. Hoffmann - Deterioration of InGaN active region of GaN laser diodes during p-side growth
- J.H. Kang - Simulation and fabrication of high order surface Bragg gratings
- I. Koslow - InGaN Quantum Wells on Semipolar Planes: Comparison of Growth and Optical Emission Properties on (20-21) and (20-2-1)
Conference: 24.-29.08.2014 Wrocław (Poland))