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Search results 1421 until 1430 of 4091

Dynamics in high-power diode lasers

/en/research/publications/dynamics-in-high-power-diode-lasers

Dynamics in high-power diode lasers U. Bandelowa, M. Radziunasa, A. Zeghuzib, H.-J. Wünscheb, and H. Wenzelb a Weierstrass Institute (WIAS), 10117 Berlin,…

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

/en/research/publications/optimization-of-the-epitaxial-growth-of-undoped-gan-waveguides-in-gan-based-laser-diodes-evaluated-by-photoluminescence

Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN…

Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

/en/research/publications/advances-in-electron-channelling-contrast-imaging-and-electron-backscatter-diffraction-for-imaging-and-analysis-of-structural-defects-in-the-scanning-electron-microscope

In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on…

Low resistance n-contact for UVC LEDs by a two-step plasma etching process

/en/research/publications/low-resistance-n-contact-for-uvc-leds-by-a-two-step-plasma-etching-process

The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting…

Two-photon polymerization with diode lasers emitting ultrashort pulses with high repetition rate

/en/research/publications/two-photon-polymerization-with-diode-lasers-emitting-ultrashort-pulses-with-high-repetition-rate

In this Letter, we investigate the resolution of two-photon polymerization (2PP) with an amplified mode-locked external cavity diode laser with adjustable pulse length and a high repetition rate. The…

Travelling-Wave Analysis of Extended Cavity Diode Lasers

/en/research/publications/travelling-wave-analysis-of-extended-cavity-diode-lasers

We report results of numerical simulations of the dynamic properties of single-transverse mode diode lasers subject to an external optical feedback provided by a volume holographic Bragg grating. We…

Impact of High-Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

/en/research/publications/impact-of-high-temperature-annealing-on-boron-containing-aln-layers-grown-by-metal-organic-vapor-phase-epitaxy

Herein, the impact of high-temperature (HT) annealing on the crystalline structure of metal organic vapor phase epitaxy (MOVPE)-grown boron-containing AlN layers is investigated. High-resolution…

GaN digital microwave outphasing PA

/en/research/publications/gan-digital-microwave-outphasing-pa

This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain…

Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications

/en/research/publications/design-of-a-300-ghz-externally-injection-lockable-push-push-oscillator-for-beam-steering-applications

A design for a 300 GHz reflection type push-push oscillator including an input for an external injection locking signal is proposed. The oscillator is based on substrate transferred InP double…

The influence of the GaN substrate types and active area scaling design on the conduction properties of vertical GaN MISFETs for laser driving applications

/en/research/publications/the-influence-of-the-gan-substrate-types-and-active-area-scaling-design-on-the-conduction-properties-of-vertical-gan-misfets-for-laser-driving-applications

In this work we present a systematic study on the conduction properties in vertical GaN trench MISFETs grown and manufactured on different free standing GaN substrates. It is shown that devices…