"Optisches Element und Verfahren zu dessen Herstellung"
DE 10 2004 052 857 B4
"Optoelektronisches Element und Verfahren zur kohärenten Kopplung von aktiven Bereichen optoelektronischer Elemente"
DE 10 2004 038 283 B4
"Microwave Antenna for Flip-Chip Semiconductor Modules"
DE 10 2004 014 018 B3 EP 1 726 063 B1 US 7,612,728 B2
EP validated in FR, GB
"Method for the Production of a Bragg Grating in a Semiconductor Layer Sequence by Etching and Semiconductor Element"
DE 102 00 360 B4 EP 1 464 098 B1
EP validated in GB, DE, CH, SE, IE, NL, FI, FR
"Method for the Passivation of the Mirror-Type Surfaces of Optical Semiconductor Elements"
DE 102 21 952 B4 EP 1 514 335 B1 US 7,338,821 B2
EP validated in CH, FI, FR, GB
"Microplasma Array"
US 8,545,764 B2
"Method for Producing Vertical Electrical Contact Connections in Semiconductor Wafers"
US 8,158,514,B2 JP 5080456
"Device and Method for the Generation of Terahertz Radiation"
DE 10 2006 041 728 B4 EP 2 057 720 B1
EP validated in FR, GB
"Method for Producing Through-Contacts in Semi-Conductor Wafers via Production of Through-Plated Holes"
JP 5123185 US 8,455,355 B2
"Device for Doubling the Frequency of Laser Radiation"
EP 2 235 590 B1
EP validated in CH, DE, DK, FR, GB, IE
"Method for the Production of c-plane oriented GaN Substrates or AlxGa1-xN Substrates"
EP 1 841 902 B1
EP validated in DE
"Method and Device for Producing and Detecting a Raman Spectrum"
US 7,864,311 B2 DE 10 2005 028 268 B4 EP 1 891 408 B1
EP validated in AT, CH, FR, GB, DE
"Method for Producing a Metallization Having Two Multiple Alternating Metallization Layers for at least One Contact Pad and Semiconductor Wafer Having Said Metallization for at least One Contact Pad"
DE 10 2009 013 921 B3 US 8,648,466 B2
"Method for Generating and for Detecting a Raman Spectrum"
DE 10 2009 029 648 B3 US 8,310,672 B2 EP 2 480 868 B1
EP validated in DK, FR, SE, GB, CH
"Device, Probe, and Method for the Galvanically Decoupled Transmission of a Measuring Signal"
US 7,893,683 B2
"Semiconductor Component and Associated Production Method"
US 8,003,996 B2 EP 2 095 433 B1
EP validated in DE, GB, CH
"Optoelectronic semiconductor element"
EP 2 262 067 B1
EP validated in DE, CH, GB, FR
"Optical Bank and Method for Producing the Optical Bank"
JP 5677420 B2 US 8,659,815 B2 KR 10-1572945 B1 EP 2 440 968 B1
EP validated in DE, CH, DK, FR, GB
"P-Contact and Light-Emitting Diode for the Ultraviolet Spectral Range"
JP 5689466 B2 KR 10-1642276 US 9,331,246 B2 EP 2 454 762 B1
EP validated in AT, BE, DE, CH, ES, FR, GB, IE, IT, NL
"Scalable Construction for Lateral Semiconductor Components having High Current-Carrying Capacities"
US 8,901,671 B2 EP 2 534 685 B1 JP 5738322 B2
EP validated in DE, BE, AT, FR, GB, NL
"Self-Adjusting Gate BIAS Network for Field Effect Transistors"
US 8,324,971 B2
"Diode Laser"
DE 10 2011 006 198 B4 US 8,867,586 B2
"Diode Laser and Method for Manufacturing a High-Efficiency Diode Laser"
DE 10 2011 086 744 B3 US 8,846,425 B2 EP 2 595 259 B1
EP validiert in DE, CH, FR, GB, NL, SE
"Broad Area Diode Laser with High Efficiency and Small Far-Field Divergence"
US 8,537,869 B2
"Vorrichtung und Verfahren zur Erzeugung eines Plasmas"
DE 10 2012 204 447 B4 EP 2 642 833 A2
EP validated in GB, FR
"Semiconductor Component with Field Plate Structure and Method for Producing the Same"
JP 5512287 US 8,866,191 B2 EP 2 135 286 B1
EP validated in DE, FR, GB
"Laser Diode with High Efficiency"
US 9,343,873 B2 EP 2 617 110 B1
EP validated in AT, CH, FI, FR, GB, IE, IT, DE
"Photodetector for Ultraviolet Radiation, having a High Sensitivity and a Low Dark Current"
DE 10 2011 075 103 B4 US 9,431,557 B2
"Diode Laser and Laser Resonator for a Diode Laser having Improved Lateral Beam Quality"
US 8,675,705 B2 EP 2 467 909 B1
EP validated in CH, DE, FR, SE
"Two-Cavity Surface-Emitting Laser"
US 8,824,518 B2 EP 2 337 168 B1
EP validated in DE, CH, FR, GB, NL, SE
"High-Efficiency Diode Laser"
US 8,798,109 B2 EP 2 666 213 B1
EP validated in CH, DE, FI, FR, IE, GB, IT
"Auto-Heterodyne Receiver"
US 9,100,113 B2
"System for Frequency Conversion, Semiconductor Device and Method for Operating and Manufacturing the Same"
US 9,008,145 B2 EP 2 650 985 B1
EP validated in DE, AT, CH, FI, FR
"Light-Conducting Device, Device Having a Light-Conducting Device, and Means for Emitting Linear Parallel Light Beams"
DE 10 2014 203 479 B3 EP 3 111 267 B1 JP 6403792 B2 US 10,295,831 B2
EP validated in DE, CH, FR, GB, IE, NL, SE
"Semiconductor Device with Heat Removal Structure and Related Production Method"
US 8,994,036 B2 EP 2 654 078 B1
EP validated in DE, FR, GB, SE
"Semiconductor Layer Structure"
US 8,809,968 B2 DE 10 2012 207 501 B4 EP 2 662 896 B1
EP validated in DE, BE, FR, GB, IT
"Device and Method for Selecting Optical Pulses"
DE 10 2012 209 485 B4 US 9,448,423 B2 EP 2 672 311 B1
EP validated in DE, FR, GB
"Device and Method for Selective Transmission of an Optical Signal"
US 8,559,098 B2 DE 10 2008 056 096 B4 EP 2 347 301 B1
EP validated in DE, FR, GB
"Device Having an Arrangement of Optical Elements"
US 9,563,061 B2 JP 6255022 B2 EP 2 895 844 B1
EP validated in DE, CH, DK, FI, GB, IT
"Photodetektor und Vorrichtung zur Desinfektion von Wasser diesen umfassend"
DE 10 2014 225 632 B3
"Optisches Gitter für Littrow-Aufstellung und optische Anordnung unter Verwendung des optischen Gitters"
DE 10 2012 208 772 B4
"UV LED with Tunnel-injection Layer"
US 9,705,030 B2
"Method for Forming a Metal Contact on a Surface of a Semiconductor, and Device with a Metal Contact"
EP 3 084 808 B1 DE 10 2013 226 270 B3 KR 10-1831216 US 9,768,356 B2 JP 6511451 B2
EP validated in DE, FR, GB, IE, PL
"Strahlungsdetektor und Verfahren zu dessen Herstellung"
DE 10 2017 103 687 B3
"Vorrichtung zur Ansteuerung eines selbstleitenden n-Kanal Endstufenfeldeffekttransisitors"
DE 10 2017 108 828 B3
"Schaltung, System zur Entfernungsbestimmung und ein Fahrzeug"
DE 10 2018 103 518 B3
"Struktursystem zum Aufbau photonischer integrierter Schaltkreise und Verfahren zu dessen Herstellung"
DE 10 2018 108 114 B3
"Laser Diode with Distributed Feedback and Method for Producing"
US 10,348,056 B2
"Laser Diode with Improved Electrical Conduction Properties"
US 10,498,105 B2
"Templates for the lateral overgrowth of at least one group III nitride based layer"
DE 10 2012 223 986 B4 EP 2 747 127 B1
EP validiert in DE
"Waveguide Arrangement"
EP 2 932 319 B1
EP validiert in DE, DK, FR, GB
"Optical System and Method for Spectroscopy"
US 10,416,081 B2
"Diodenlaser mit verbessertem Modenprofil"
DE 10 2017 101 422 B4
"Optical Device Comprising a Micro-Optical System and a Retainer, and Method for Producing an Optical Device"
US 10,690,877 B2 JP 6683702 B2
"Verfahren zur Herstellung eines mit einem Halbleitermaterial beschichteten Saphirsubstrats, nach dem Verfahren erhältliches beschichtetes Saphirsubstrat sowie Verwendung eines solchen Substrat in einer Leuchtdiode"
DE 10 2016 114 250 B4
