Patents
"Method and Device for Producing and Detecting a Raman Spectrum"
US 7,864,311 B2 DE 10 2005 028 268 B4 EP 1 891 408 B1
EP validated in AT, CH, FR, GB, DE
"Method for Generating and for Detecting a Raman Spectrum"
DE 10 2009 029 648 B3 US 8,310,672 B2 EP 2 480 868 B1
EP validated in DK, FR, SE, GB, CH
"Semiconductor Component and Associated Production Method"
US 8,003,996 B2 EP 2 095 433 B1
EP validated in DE, GB, CH
"P-Contact and Light-Emitting Diode for the Ultraviolet Spectral Range"
JP 5689466 B2 KR 10-1642276 US 9,331,246 B2 EP 2 454 762 B1
EP validated in AT, BE, DE, CH, ES, FR, GB, IE, IT, NL
"Scalable Construction for Lateral Semiconductor Components having High Current-Carrying Capacities"
US 8,901,671 B2 EP 2 534 685 B1 JP 5738322 B2
EP validated in DE, BE, AT, FR, GB, NL
"Diode Laser"
DE 10 2011 006 198 B4 US 8,867,586 B2 EP 2 506 371 B1
EP validated in DE, CH, FR, GB, DK, SE
"Diode Laser and Method for Manufacturing a High-Efficiency Diode Laser"
US 8,846,425 B2 EP 2 595 259 B1
EP validated in DE, CH, FR, GB, NL, SE
"Broad Area Diode Laser with High Efficiency and Small Far-Field Divergence"
US 8,537,869 B2 EP 2 523 279 B1
EP validated in CH, ES, GB, IE, UP
"Laser Diode with High Efficiency"
US 9,343,873 B2 EP 2 617 110 B1
EP validated in AT, CH, FI, FR, GB, IE, IT, DE
"Diode Laser and Laser Resonator for a Diode Laser having Improved Lateral Beam Quality"
US 8,675,705 B2 EP 2 467 909 B1
EP validated in CH, DE, FR, SE
"Two-Cavity Surface-Emitting Laser"
US 8,824,518 B2 EP 2 337 168 B1
EP validated in DE, CH, FR, GB, NL, SE
"High-Efficiency Diode Laser"
US 8,798,109 B2 EP 2 666 213 B1
EP validated in CH, DE, FI, FR, IE, GB, IT
"System for Frequency Conversion, Semiconductor Device and Method for Operating and Manufacturing the Same"
US 9,008,145 B2 EP 2 650 985 B1
EP validated in DE, AT, CH, FI, FR
"Light-Conducting Device, Device having a Light-Conducting Device, and Means for Emitting Linear Parallel Light Beams"
DE 10 2014 203 479 B3 EP 3 111 267 B1 JP 6403792 B2 US 10,295,831 B2
KR 10-2225789
EP validated in DE, CH, FR, GB, IE, NL, SE
"Semiconductor Device with Heat Removal Structure and Related Production Method"
US 8,994,036 B2 EP 2 654 078 B1
EP validated in DE, FR, GB, SE
"Semiconductor Layer Structure"
US 8,809,968 B2 DE 10 2012 207 501 B4 EP 2 662 896 B1
EP validated in DE, BE, FR, GB, IT
"Device and Method for Selecting Optical Pulses"
DE 10 2012 209 485 B4 US 9,448,423 B2 EP 2 672 311 B1
EP validated in DE, FR, GB
"Device and Method for Selective Transmission of an Optical Signal"
US 8,559,098 B2 DE 10 2008 056 096 B4 EP 2 347 301 B1
EP validated in DE, FR, GB
"Device having an Arrangement of Optical Elements"
US 9,563,061 B2 JP 6255022 B2 EP 2 895 844 B1
EP validated in DE, CH, DK, FI, GB, IT
"UV LED with Tunnel-injection Layer"
US 9,705,030 B2
"Method for Forming a Metal Contact on a Surface of a Semiconductor, and Device with a Metal Contact"
EP 3 084 808 B1 DE 10 2013 226 270 B3 KR 10-1831216 US 9,768,356 B2
JP 6511451 B2
EP validated in DE, FR, GB, IE, PL
"Radiation Detector and Method for Producing Same"
DE 10 2017 103 687 B3 EP 3 449 508 B1 US 10,825,947 B2 JP 6914967 B2
EP validated in DE, BE, AT, CH, ES, FR, GB, FI, IE, IT, NL, PL, TR, SE
"Device for Controlling a Self-Conducting n-Channel Output Stage Field Effect Transistor"
DE 10 2017 108 828 B3 US 10,840,860 B2 EP 3 602 777 B1
EP validated in AT, BE, CH, DE, FR, GB, IT, NL, SE
"Schaltung, System zur Entfernungsbestimmung und ein Fahrzeug"
DE 10 2018 103 518 B3
"Struktursystem zum Aufbau photonischer integrierter Schaltkreise und Verfahren zu dessen Herstellung"
DE 10 2018 108 114 B3
"Laser Diode with Distributed Feedback and Method for Producing"
US 10,348,056 B2 CN 107851966 B
"Laser Diode with Improved Electrical Conduction Properties"
DE 10 2015 203 113 B4 US 10,498,105 B2 JP 6842422 B2 EP 4 283 802 B1
EP validiert in CH, DE, FR, GB
"Optical System and Method for Spectroscopy"
DE 10 2016 118 898 B4 EP 3 309 538 B1 US 10,416,081 B2
EP validated in AT, DE, DK, ES, FR, GB, IE, IT, NL
"Diode Laser with Improved Mode Profile"
DE 10 2017 101 422 B4 US 10,840,674 B2
"Optical Device Comprising a Micro-Optical System and a Retainer, and Method for Producing an Optical Device"
US 10,690,877 B2 JP 6683702 B2 EP 3 175 276 B1
EP validated in AT, CH, DE, ES, FR, GB, IT, SE
"Verfahren zur Herstellung eines mit einem Halbleitermaterial beschichteten Saphirsubstrats, nach dem Verfahren erhältliches beschichtetes Saphirsubstrat sowie Verwendung eines solchen Substrat in einer Leuchtdiode"
DE 10 2016 114 250 B4
"Method and Device for Raman Spectroscopy"
DE 10 2016 111 747 B4 US 10,794,766 B2 EP 3 465 165 B1
JP 6888085 B2
EP validated in AT, DE, DK, FR, GB, IE, IT, NL
"Modulator for a Digital Amplifier"
DE 10 2016 106 790 B4 US 10,476,517 B2 JP 6888023 B2 EP 3 443 663 B1
EP 3 443 663 B1 (Correction)
EP validated in DE, FR, GR, IT
"Waveguide Structure and Optical System with Waveguide Structure"
US 10,833,478 B2
"Optical Pulse Generator and Method for Operating an Optical Pulse Generator"
US 10,802,116 B2 JP 7029449 B2
"Resonator und Leistungsoszillator zum Aufbau einer integrierten Plasmaquelle sowie deren Verwendung"
DE 10 2020 100 872 B4
"Schaltungsanordnung zur Begrenzung des Gatestromes an einem Feldeffekttransistor"
DE 10 2020 112 980 B3
"Gate Structure and Method for Producing Same"
US 11,127,863 B2 JP 7050063 B2
"High-Frequency Power Transistor and High-Frequency Power Amplifier"
DE 10 2018 131 040 B4 EP 3 891 886 B1 US 11,984,413 B2 CN 113261200 B
KR 10-2795974
EP validated in UP, CZ, PL and GB
"Diode Laser having Reduced Beam Divergence"
DE 10 2020 108 941 B4 US 11,677,214 B2 CA 3 113 709
"Verfahren und Vorrichtung zur Ableitung eines Fehlersignals, Laser und Sensor"
DE 10 2021 102 038 B3
"Vorrichtung und Verfahren zur Raman-Spektroskopie"
DE 10 2022 124 375 B3
"Laserdiode mit integrierter thermischer Blende"
DE 10 2020 133 368 B4
"Transistor and Method of Fabrication of the Same including a Gate Contact formed in a Recess through the Passivation Dielelectric Layer in Contact with the Active Layer"
DE 10 2017 127 182 B4 US 11,889,768 B2
"Verspannungsarme optische Bank mit thermischer Entkopplung"
DE 10 2023 111 589 B3
"Device and Method for UV Antisepsis"
DE 10 2019 124 017 B4 US 12,121,745 B2 JP 7656875 B2
"Laserbarren mit verringerter lateraler Fernfelddivergenz"
DE 10 2021 114 411 B4
"Halbleiterlaserbarren mit verbesserter Strahlqualität"
DE 10 2023 102 047 B4
"Diode Laser having a Current Shield"
DE 10 2020 120 703 B4 EP 4 193 430 B1
"Device for Generating Laser Radiation"
US 12,218,487 B2
"Verfahren zur Herstellung eines Transistors mit hoher Elektronenbeweglichkeit und hergestellter Transistor"
JP 7656701 B2