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Beam propagation in an active planar waveguide with an angled bragg grating (α laser)
/en/research/publications/beam-propagation-in-an-active-planar-waveguide-with-an-angled-bragg-grating-alpha-laser
In the angled Bragg grating semiconductor laser (α laser), light does not propagate at a right angle with respect to the two-dimensional corrugated grating of the planar waveguide. A closed-form…
Zonal diffraction efficiencies and imaging of micro-Fresnel lenses
/en/research/publications/zonal-diffraction-efficiencies-and-imaging-of-micro-fresnel-lenses
The dependence of the zonal efficiency of a transmission Fresnel lens on the number of quantization levels and on the polarization of the light, without and with an antireflection (AR) overcoating is…
Photoluminescence on ordered GaxIn1-xAsyP1-y
/en/research/publications/photoluminescence-on-ordered-gaxin1-xasyp1-y
Photoluminescence of Ga0.54In0.46As0.12P0.88 layers grown by metalorganic vapor phase epitaxy on differently oriented GaAs substrates has been investigated. Valence-band splitting due to symmetry…
Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties
/en/research/publications/ohmic-pdznaulab6au-contacts-on-p-type-in053ga047as-electrical-and-metallurgical-properties
The development of a shallow and low-resistive contact on moderately doped (p≈5×1018 cm-3 In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional…
Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems
/en/research/publications/low-resistance-thermally-stable-aupttiwsin-ohmic-contacts-on-n-ingaasn-gaas-layer-systems
The electrical properties of the ohmic contact systems Au/Pt/Ti/WSiN and Au/Pt/Ti to n+-InGaAs/GaAs layers grown by metalorganic vapor phase epitaxy were investigated and compared to each other. The…
Review and experimental benchmarking of machine learning algorithms for efficient optimization of cold atom experiments
/en/research/publications/review-and-experimental-benchmarking-of-machine-learning-algorithms-for-efficient-optimization-of-cold-atom-experiments
The generation of cold atom clouds is a complex process which involves the optimization of noisy data in high dimensional parameter spaces. Optimization can be challenging both in and especially…
‘Sawfish’ Photonic Crystal Cavity for Near-Unity Emitter-to-Fiber Interfacing in Quantum Network Applications
/en/research/publications/sawfish-photonic-crystal-cavity-for-near-unity-emitter-to-fiber-interfacing-in-quantum-network-applications
Photon loss is one of the key challenges to overcome in complex photonic quantum applications. Photon collection efficiencies directly impact the amount of resources required for measurement-based…
Compact 976 nm pump-module for 200-µm fibers based on DBR-stabilized double-emitter stacks
/en/research/research-news/compact-976-nm-pump-module-for-200-um-fibers-based-on-dbr-stabilized-double-emitter-stacks
We have developed a new 500 W diode laser module concept, tailored for pumping Yb-doped fiber lasers at 976 nm. The module uses FBH’s DBR-stabilized double emitters in their proprietary…
Overlapping source field plate process module for high-voltage GaN HFETs with low off state leakage currents
/en/research/publications/overlapping-source-field-plate-process-module-for-high-voltage-gan-hfets-with-low-off-state-leakage-currents
GaN-based high-voltage HFETs have been fabricated using single source-connected field plates. The device breakdown voltage was as high as 2370 V for 15.5 μm gate drain separation. A…
Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
/en/research/publications/wafer-bow-tuning-with-stealth-laser-patterning-for-vertical-high-voltage-devices-with-thick-gan-epitaxy-on-sapphire-substrates
In this work we present a systematic study on a novel method to reduce the very strong bow of 4-inch GaN-on-sapphire wafers with more than 15 μm thick epitaxy. Laser scribing of the epitaxial…