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DRIP XX
/en/events/drip-xx
The FBH is participating in the 20th International Conference on Defects – Recognition, Imaging, and Physics in Semiconductors with a conference contribution created in cooperation with the MBI.
Defect Reduction and Yield Improvement of MIM Capacitors
/en/research/publications/defect-reduction-and-yield-improvement-of-mim-capacitors
The aim of this work is to observe and analyze strain related effects in MIM capacitor structures that lead to a degradation of fabrication yield. Our results indicate that the strain difference…
Subtractive WSiN thin film resistors for RF GaN and InP MMICs
/en/research/publications/subtractive-wsin-thin-film-resistors-for-rf-gan-and-inp-mmics
In this study, WSiN-based thin film resistors are implemented and characterized as an alternative to NiCr-based resistors in GaN and InP MMICs. This approach simplifies the fabrication process by…
AVS ALD/ALE 2024
/en/events/avs-aldale-2024
FBH will be presenting its latest research findings at the AVS 24th International Conference on Atomic Layer Deposition (ALD 2024) featuring the 11th International Atomic Layer Etching Workshop (ALE…
Möglichkeit zur „technologischen Souveränität“ durch Aluminiumnitrid-Leistungshalbleiter
/en/media-center/media-review/moeglichkeit-zur-technologischen-souveraenitaet-durch-aluminiumnitrid-leistungshalbleiter
Eine Forschungspartnerschaft hält eine deutsche Wertschöpfungskette vom Grundmaterial bis zur Bauelementefertigung für machbar. Das Material sei den zum Beispiel auch in Photovoltaik-Wechselrichtern…
Leistungshalbleiter mit Aluminiumnitrid – made in Germany
/en/media-center/media-review/leistungshalbleiter-mit-aluminiumnitrid-made-in-germany
Deutsche Forschungspartner demonstrieren erstmals die praktische Umsetzung einer Aluminiumnitrid-basierten Wertschöpfungskette für Leistungshalbleiter - vom Grundmaterial bis zur Bauelementfertigung.
Neuer Halbleiter besser als SiC und GaN
/en/media-center/media-review/neuer-halbleiter-besser-als-sic-und-gan
Eine neue, auf Aluminiumnitrid (AlN) basierende Halbleitertechnologie für leistungselektronische Transistoren und mmWellen-Hochfrequenzschaltungen hat das Potenzial, die Verluste bei der Umwandlung…
German researchers demo practical implementation of AlN-based value chain for power semiconductors
/en/media-center/media-review/german-researchers-demo-practical-implementation-of-aln-based-value-chain-for-power-semiconductors
In power electronics, conventional silicon devices are being replaced by more powerful wide-bandgap (WBG) semiconductors with superior physical and electrical properties. Silicon carbide (SiC) has…
Supply chain for power electronic devices based on novel semiconductor material aluminum nitride – made in Germany
/en/media-center/media-review/supply-chain-for-power-electronic-devices-based-on-novel-semiconductor-material-aluminum-nitride-made-in-germany-1
For the first time, German research partners have demonstrated the practical implementation of an aluminum nitride-based value chain for power semiconductors, from base material growth to device…
German research cluster announces AlN success
/en/media-center/media-review/german-research-cluster-announces-aln-success-1
A new semiconductor technology based on AlN for power electronic transistors as well as mmWave radio-frequency circuits has the potential to significantly reduce losses in electrical energy…