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Advancements in characterization techniques for high-speed transistors
/en/research/research-news/advancements-in-characterization-techniques-for-high-speed-transistors
Our high-speed transistors are promising candidates for future wireless communication applications. We develop robust characterization techniques to extract reliable transistor parameters through 3D…
FiO LS 2024
/en/events/fio-ls-2024
The FBH will present latest research results at this year's FiO LS conference (Frontiers in Optics + Laser Science).
fit4nano 2024
/en/events/fit4nano-2024
The FBH will present its latest research results at the Focused Ion Technology for Nanomaterials Workshop in several contributions.
Soitec kicks off European project Move2THz to develop future high-frequency InP-based semiconductors
/en/media-center/media-review/soitec-kicks-off-european-project-move2thz-to-develop-future-high-frequency-inp-based-semiconductors
A European research and industry consortium led by engineered substrate manufacturer Soitec of Bernin, near Grenoble, France has begun work to develop a future generation of high-frequency…
Podcast: Weiß der Adler: ST3AM | S2 Folge 7
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Und wir sprechen in unserem Jobprofil mit Anastasia Schröder über ihre Ausbildung zur Mikrotechnologin am Ferdinand-Braun-Institut.
Videos
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Take a look inside our state-of-the-art cleanroom laboratories – where high-end semiconductor chips are developed We show various areas of our cleanroom, where we manufacture high-performance…
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
/en/research/publications/special-topic-on-wide-and-ultrawide-bandgap-electronic-semiconductor-devices
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices J. Würfl1, T. Palacios2, H. Grace Xing3, Y. Hao4, and M. Schubert5 …
Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration
/en/research/publications/experimental-investigation-of-gan-on-alnsic-transistors-with-regard-to-monolithic-integration
The monolithic integration of the GaN-on-Si high-electron-mobility transistors (HEMTs) is challenging since the back-gating effects caused by a common substrate degrade the device’s performance. In…
Senatorin Czyborra auf Sommertour bei CSMB, FBH und HZB in Adlershof
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„Berlin muss Standort für internationale Spitzenforschung bleiben“ Zum Abschluss ihrer diesjährigen Sommertour besuchte die Senatorin für Wissenschaft, Gesundheit und Pflege, Dr. Ina Czyborra,…
Evolutionary Optimized, Monocrystalline Gold Double Wire Gratings as a Novel SERS Sensing Platform
/en/research/publications/evolutionary-optimized-monocrystalline-gold-double-wire-gratings-as-a-novel-sers-sensing-platform
Achieving reliable and quantifiable performance in large-area surface-enhanced Raman spectroscopy (SERS) substrates poses a formidable challenge, demanding signal enhancement while ensuring response…