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Girls'Day
/en/career/pupils/girlsday
How does a laser work? (in German) In issue 419 (Nov. 2010), the Abrafaxe and the Ferdinand-Braun-Institut briefly explain how a laser works and what it is used for: (Copyright: Mosaik-Comic,…
GCOPTICS 2024
/en/events/gcoptics-2024
The FBH presents its latest research findings in a contribution at the Global Conference on Optics, Photonics and Lasers.
In situ monitoring and control of InGaP growth on GaAs in MOVPE
/en/research/publications/in-situ-monitoring-and-control-of-ingap-growth-on-gaas-in-movpe
The growth of InGaP on GaAs was investigated and controlled by in situ reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE). In contrast to other III–V semiconductors, the…
Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)
/en/research/publications/overgrowth-of-trenches-with-algaas-using-metalorganic-vapor-phase-epitaxy-movpe
A detailed study of the regrowth of (AlGa)As over trenches etched into (InGa)P, an important step in the fabrication of index-guided laser structures, is presented. The resulting Al concentration…
MOVPE growth of tunable DBR laser diode emitting at 1060 nm
/en/research/publications/movpe-growth-of-tunable-dbr-laser-diode-emitting-at-1060-nm
Tunable laser diodes emitting at 1060 nm have been grown by metalorganic vapor-phase epitaxy (MOVPE). For the growth of the highly strained InGaAs/GaAs quantum well (QW) high growth rates are found…
Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy
/en/research/publications/ordering-in-gaxin1-xasyp1-y-grown-on-gaas-by-metalorganic-vapour-phase-epitaxy
We have investigated ordering behaviour in MOVPE-grown GaInAsP lattice-matched to GaAs using luminescence and diffraction methods. Our observations indicate that the occurrence of ordering variants…
X-ray characterization of an Esaki-Tsu superlattice and transport properties
/en/research/publications/x-ray-characterization-of-an-esaki-tsu-superlattice-and-transport-properties
We have studied, by x-ray scattering, structural parameters of a short-period GaAs/AlAs superlattice and related the parameters to electric transport properties. Our results, for a superlattice…
Characterization of Laser Structures by EBIC Measurements and Simulation
/en/research/publications/characterization-of-laser-structures-by-ebic-measurements-and-simulation
The electron beam induced current (EBIC) profiles of laser structures based on InGaAsP/InGaP/GaAs show a main peak and an additional shoulder or peak. To understand this phenomenom EBIC profiles at…
Publications
/en/research/publications/in-situ-characterization-of-strain-distribution-in-broad-area-high-power-lasers-under-operation-by-high-resolution-x-ray-diffraction-and-topography-using-synchrotron-radiation-1
Shift and shape of grating diffracted beams
/en/research/publications/shift-and-shape-of-grating-diffracted-beams
The grating diffraction of beams is theoretically investigated by applying an electromagnetic method (the Integral Equation System Method with Parametrization of the grating profile = IESMP) to their…