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Fusion at Lawrence Livermore
/en/events/fusion-at-lawrence-livermore
Will Fenwick Lawrence Livermore Labs, USA
Newly published: frequent on ultra-widebandgap semiconductor devices
/en/media-center/press-releases/newly-published-frequent-on-ultra-widebandgap-semiconductor-devices
The current frequent issue focuses on recent FBH developments based on wide-bandgap and ultra-widebandgap semiconductors - and their important role in reducing the energy consumption of modern…
Adlershof Research Forum 2024: Innovations and strategic impulses for the science campus
/en/media-center/media-review/adlershof-research-forum-2024-innovations-and-strategic-impulses-for-the-science-campus
Almost 100 scientists, young researchers and founders came together to the Adlershof Research Forum on 11.11.2024 at Erwin Schrödinger Centre to discuss current developments and challenges facing the…
226 nm Far-Ultraviolet-C Light Emitting Diodes with an Emission Power over 2 mW
/en/research/publications/226-nm-far-ultraviolet-c-light-emitting-diodes-with-an-emission-power-over-2-mw
Far-ultraviolet-C (far-UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n-AlGaN contact layers, quantum well barriers, and quantum well numbers are…
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
/en/research/publications/gan-drift-layers-on-sapphire-and-gan-substrates-for-12kv-class-vertical-power-devices
The development of processes for epitaxial growth of vertical gallium nitride (GaN) drift layers enabling 1.2 kV breakdown voltage on low-cost sapphire substrates is presented in comparison to…
Switch Integrated Ka-Band Low Noise Amplifier in GaN/AlN HEMT Technology
/en/research/publications/switch-integrated-ka-band-low-noise-amplifier-in-ganaln-hemt-technology
This paper presents low noise amplifiers (LNA) with integrated DC and RF switching features for multifunctional single chip RF front end (RFFE) applications. Two 28–32 GHz LNAs, with and without…
Prediction of the Large-Signal GaN HEMT Performance Using Accurate TCAD-Compact Modeling Method
/en/research/publications/prediction-of-the-large-signal-gan-hemt-performance-using-accurate-tcad-compact-modeling-method
Accurate prediction of the large-signal power performance of gallium nitride (GaN) high electron mobility transistors (HEMTs) can be achieved by combining TCAD device modeling with the RF simulations…
Evaluation of Integrated GaN Diodes as Varactors for Tunable MMIC PAs from C- to K-Band
/en/research/publications/evaluation-of-integrated-gan-diodes-as-varactors-for-tunable-mmic-pas-from-c-to-k-band
Variable capacitors (varactors) can act as powerful enablers for reconfigurable RF power amplifiers (PAs) in microwave monolithic integrated circuit (MMIC) technology. While their use for custom…
Germany Launches €12M Microelectronics Skills Academy to Meet Industry Demand
/en/media-center/media-review/germany-launches-eur12m-microelectronics-skills-academy-to-meet-industry-demand
The German government has launched a initiative to address the semiconductor skills gap by establishing a €12 million skills academy focused on microelectronics and microsystem technology, eeNews…
Bildungsoffensive für die Chipindustrie
/en/media-center/media-review/bildungsoffensive-fuer-die-chipindustrie
Fachkräfte für die Chipindustrie sichern – mit diesem Ziel startete am 1. November das vom Bundesministerium für Bildung und Forschung (BMBF) geförderte bundesweite Leitprojekt ›Fachkräfte für die…