Ultra-narrow linewidth GaAs-based DBR Lasers

S. Wenzel, O. Brox, P. Della Casa, H. Wenzel, A. Knigge, B. Arar, S. Nechayev, S. Kreutzmann and A. Wicht

Published in:

Conf. on Lasers and Electro-Optics (CLEO 2021), May 9-14, virtual event, p. ATh4G.3 (2021).

Copyright © OSA 2021.
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Abstract:

We present a novel approach for GaAs-based DBR diode lasers with an extended cavity. The developed chips exhibit a record small 3 dB linewidth of 25 kHz @ 1 ms at the wavelength of 1064 nm.

Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany