Beyond 650 V Dynamic Switching of High Voltage AlGaN/GaN/AlN HEMTs on Monocrystalline AlN Substrates
H. Halhoul1, M. Wolf1, F. Brunner1, S. Besendörfer2, M.D. Cuallo1, S. Breuer1, G. Lukin2, A. Lesnik2, E. Meissner2, O. Hilt1
Published in:
37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, Jun. 1-5, ISBN 978-4-88686-441-3, GaN1-05 (2025).
Abstract:
We present AlN-based GaN-channel HEMTs with an undoped AlN-buffer layer, MOCVD-grown on a 1" PVT-grown monocrystalline AIN substrate for high-voltage switching applications. These devices achieve switching transients of 1A/766V on 9.2 mm transistors and 5A/250V switching on 92 mm transistors, with an on-state resistance of 115mΩ and a saturation current exceeding 50 A. 1530 V breakdown voltage and a power density of 1.2GW/cm2 were achieved on test transistors with 18.25μm gate-drain separation. The study further evaluates the impact of GaN channel thickness on dynamic Ron degradation under high voltage stress and highlights the role of the AlN-buffer/GaNchannel interface quality on the dispersion effects. The presented switching voltage and current levels as well as the power density are the highest achieved on monocrystalline AIN substrates so far.
1 Ferdinand-Braun-Institut (FBH), Berlin, Germany
2 Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany
Keywords:
GaN channel, AlN buffer, HEMTs, HFETs, Single-crystal AlN, homoepitaxy
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