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Publications

Conference contributions - under Events
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Dissertations
Collage of several patent specifications from various countries, including Germany, the USA and Japan. Information such as file numbers, filing dates and patent numbers are presented.

Patents

GaN Trap Model Extraction based on MHz Load-line Measurements

P. Beleniotis#, C. Andrei#, C. Zervos#, U.L. Rohde#, M. Rudolph#*

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., San Francisco, USA, Jun. 15-20, ISBN 979-8-3315-1409-9, pp. 1059-1062 (2025).

Abstract:

The extraction of model parameters for GaN HEMTs is a challenging task that typically requires a comprehensive series of pulsed measurements to ensure that the resulting model is both accurate and convergence-stable. This study introduces, for the first time, an extraction procedure that utilizes I-V curves generated by MHz load-line measurements, effectively replacing the complex and time-intensive pulsed measurements. A drain-lag model extraction was based on load-line I-V curves and validated along with a pulsed-IV-based model through RF large-signal simulations, demonstrating excellent performance.

# Brandenburg University of Technology Cottbus-Senftenberg, Germany
* Ferdinand-Braun-Institut, Germany

Keywords:

GaN, compact model, load-line, model parameter extraction

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