Publikationen

A. Muhin, M. Guttmann, V. Montag, N. Susilo, E. Ziffer, L. Sulmoni, S. Hagedorn, N. Lobo-Ploch, J. Rass, L. Cancellara, S. Wu, T. Wernicke, and M. Kneissl

Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities

phys. stat. sol. (a), early view, 2200458, doi:10.1002/pssa.202200458 (2023).

H. Yazdani, A. Graff, M. Simon-Najasek, F. Altmann, F. Brunner, I. Ostermay, S. Chevtchenko, and J. Würfl

Analysis of Mechanical Strain in AlGaN/GaN HFETs

phys. stat. sol. (a), early view, 2200683, doi:10.1002/pssa.202200683 (2023).

K. Tetzner, A. Thies, P. Seyidov, T.-S. Chou, J. Rehm, I. Ostermay, Z. Galazka, A. Fiedler, A. Popp, J. Würfl, and O. Hilt

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

J. Vac. Sci. Technol. A, vol. 41, no. 4, pp. 043102, doi:10.1116/6.0002642 (2023).

T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Grüneberg, J. Rehm, T.T.V. Tran, A. Fiedler, K. Tetzner, Z. Galazka, M. Albrecht, and A. Popp

High-mobility 4 µm MOVPE-grown (100) β-Ga₂O₃ film by parasitic particles suppression

Jpn. J. Appl. Phys., vol. 62, no. SF, pp. SF1004, doi:10.35848/1347-4065/acb360 (2023).

K. Tetzner, M. Klupsch, A. Popp, S.B. Anooz, T.-S. Chou, Z. Galazka, K. Ickert, M. Matalla, R.-S. Unger, E. Bahat Treidel, M. Wolf, A. Trampert, J. Würfl, and O. Hilt

Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm⁻¹

Jpn. J. Appl. Phys., vol. 62, no. SF, pp. SF1010, doi:10.35848/1347-4065/acbebc (2023).

S.K. Khamari, S. Arslan, C. Zink, S.J. Sweeney, and P. Crump

Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers

Appl. Phys. Lett., vol. 122, no. 21, pp. 211101, doi:10.1063/5.0149986 (2023).

M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni and M. Meneghini

Trapping in Al₂O₃/GaN MOScaps investigated by fast capacitive techniques

IEEE International Reliability Physics Symposium (IRPS 2023), Monterey, USA, Mar. 26-30, ISBN 978-1-6654-5672-20, pp. 2C.4-1-2C.4-5 (2023).

T. Kolbe, A. Knauer, J. Rass, H.K. Cho, S. Hagedorn, F. Bilchenko, A. Muhin, J. Ruschel, M. Kneissl, S. Einfeldt, and M. Weyers

234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer

Appl. Phys. Lett., vol. 122, no. 19, pp. 191101, doi:10.1063/5.0143661 (2023).

F. Piva, M. Pilati, M. Buffolo, N. Roccato, N. Susilo, D. Hauer Vidal, A. Muhin, L. Sulmoni, T. Wernicke, M. Kneissl, C. De Santi, G. Meneghesso, E. Zanoni, and M. Meneghini

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Appl. Phys. Lett., vol. 122, no. 18, pp. 181102, doi:10.1063/5.0144783 (2023).

J. Höpfner, P. Gupta, M. Guttmann, J. Ruschel, J. Glaab, T. Kolbe, J. Rass, A. Knauer, C. Stölmacker, S. Einfeldt, T. Wernicke, M. Weyers, and M. Kneissl

Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs

Appl. Phys. Lett., vol. 122, no. 15, pp. 151104, doi:10.1063/5.0139200 (2023).

S. Kang, C. Golz, C. Netzel, I. Mediavilla, J. Serrano, J. Jiménez, and F. Hatami

Gallium Phosphide Nanowires Grown on SiO₂ by Gas-Source Molecular Beam Epitaxy

Cryst. Growth Des., vol. 23, no. 4, pp. 2568–2575 (2023).

S. Abend, B. Allard, A.S. Arnold, T. Ban, L. Barry, B. Battelier, A. Bawamia, Q. Beaufils, S. Bernon, A. Bertoldi, A. Bonnin, P. Bouyer, A. Bresson, O.S. Burrow, B. Canuel, B. Desruelle, G. Drougakis, R. Forsberg, N. Gaaloul, A. Gauguet, M. Gersemann, P.F. Griffin, H. Heine, V.A. Henderson, W. Herr, S. Kanthak, M. Krutzik, M.D. Lachmann, R. Lammegger, W. Magnes, G. Mileti, M.W. Mitchell, S. Mottini, D. Papazoglou, F. Pereira dos Santos, A. Peters, E. Rasel, E. Riis, C. Schubert, S.T. Seidel, G.M. Tino, M. Van Den Bossche, W. von Klitzing, A. Wicht, M. Witkowski, N. Zahzam, and M. Zawada

Technology roadmap for cold-atoms based quantum inertial sensor in space

AVS Quantum Sci., vol. 5, no. 1, pp. 019201, doi:10.1116/5.0098119 (2023).

M. Maiwald, K. Sowoidnich, B. Sumpf

Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system

Proc. of SPIE, vol. 12396, Plasmonics in Biology and Medicine XX, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1239602 (2023).

G. Blume, O. Matalla, H. Wenzel, A. Maaßdorf, D. Feise, J. Fricke, P. Ressel, S. Kreutzmann, A. Ginolas, A. Sahm, A. Knigge, K. Paschke

Single mode 660 nm DBR tapered laser with 1 W optical output power

Proc. of SPIE, vol. 12402, Components and Packaging for Laser Systems IX, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1240205 (2023).

H. Christopher, N. Ammouri, A. Maaßdorf, J. Fricke, A. Ginolas, J. Glaab, A. Liero, C. Zink, M. Ekterai, H. Wenzel, A. Knigge

2 kW pulse power from internal wavelength stabilized diode laser bar for LiDAR applications

Proc. of SPIE, vol. 12403, High-Power Diode Laser Technology XXI, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1240302 (2023).

C. Zink, M. Ekterai, D. Martin, W. Clemens, A. Maennel, K. Mundinger, L. Richter, P. Crump, A. Knigge

Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers

Proc. of SPIE, vol. 12403, High-Power Diode Laser Technology XXI, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124030E (2023).

C. Mourikis, D. Feise, H. Wenzel, P. Della Casa, K. Paschke, G. Tränkle

9 W tapered laser diodes with high beam quality at 760 nm

Proc. of SPIE, vol. 12403, High-Power Diode Laser Technology XXI, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124030G (2023).

Md.J. Miah, M.M. Karow, M. Elattar, D. Martin, P. Della Casa, S. Grützner, S. Strohmaier, A. Knigge, P. Crump, G. Tränkle

Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars

Proc. of SPIE, vol. 12403, High-Power Diode Laser Technology XXI, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124030I (2023).

B. King, S. Arslan, A. Boni, P. Della Casa, D. Martin, A. Thies, A. Knigge, P. Crump

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

Proc. of SPIE, vol. 12403, High-Power Diode Laser Technology XXI, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124030J (2023).

F. Piva, M. Buffolo, C. De Santi, M. Pilati, N. Roccato, A. Muhin, N. Susilo, D. Hauer Vidal, L. Sulmoni, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, M. Meneghini

Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy

Proc. of SPIE, vol. 12421, Gallium Nitride Materials and Devices XVIII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1242107 (2023).

L.S. Theurer, M. Maiwald, A. Müller, J. Fricke, A. Knigge, B. Sumpf, G. Tränkle

Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm

Proc. of SPIE, vol. 12440, Novel In-Plane Semiconductor Lasers XXII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1244005 (2023).

A. Müller, M. Maiwald, B. Sumpf

Comparison of micro-integrated dual-wavelength master oscillator power amplifiers at 785 nm

Proc. of SPIE, vol. 12440, Novel In-Plane Semiconductor Lasers XXII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1244006 (2023).

J.W. Tomm, J. Ruschel, H.K. Cho, S. Einfeldt

Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters

Proc. of SPIE, vol. 12440, Novel In-Plane Semiconductor Lasers XXII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 1244008 (2023).

H. Christopher, M. Beier, J. Fricke, J. Glaab, A. Liero, A. Maaßdorf, J.-P. Koester, H. Wenzel, A. Knigge

Investigation of distributed Bragg reflectors tapered-ridge-waveguide lasers under nanosecond high pulse current excitation

Proc. of SPIE, vol. 12440, Novel In-Plane Semiconductor Lasers XXII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124400I (2023).

B. Sumpf, C. Zink, A. Maaßdorf, J. Fricke, P. Ressel, A. Müller, M. Maiwald, A. Knigge, G. Tränkle

Reliable operation of 1064 nm DBR tapered lasers and monolithic master oscillator tapered amplifiers at output powers up to 7 W

Proc. of SPIE, vol. 12440, Novel In-Plane Semiconductor Lasers XXII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124400N (2023).

N. Werner, M. Triebkorn, A. Ginolas, S. Kreutzmann, P. Hildenstein, K. Paschke, G. Tränkle

Efficiency optimization of ridge waveguide amplifiers at 1122 nm

Proc. of SPIE, vol. 12440, Novel In-Plane Semiconductor Lasers XXII, Photonics West, San Francisco, USA, Jan 28 - Feb 3, 124400O (2023).

M. Reggentin, J.‑P. Koester, H. Wenzel, A. Knigge

Spectral behavior of high-power distributed feedback lasers

Opt. Quant. Electron., vol. 55, no. 5, art. 459, doi:10.1007/s11082-023-04747-3 (2023).

T. Henning, P. Wagner, E. Gedat, B. Kochlik, P. Kusch, K. Sowoidnich, M. Vastag, J. Gleim, M. Braune, M. Maiwald, B. Sumpf, T. Grune and D. Weber

Evaluation of Modern Approaches for the Assessment of Dietary Carotenoids as Markers for Fruit and Vegetable Consumption

Nutrients, vol. 15, no. 7, art. 1665, doi:10.3390/nu15071665 (2023).

J. Ruschel, J.W. Tomm, J. Glaab, T. Kolbe, A. Knauer, J. Rass, N. Lobo-Ploch, T.A. Musengezi, and S. Einfeldt

Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Appl. Phys. Lett., vol. 122, no. 13, pp. 131103, doi:10.1063/5.0141530 (2023).

K. Tetzner, O. Hilt, and J. Würfl

Lateral Transistors on β-Ga₂O₃: Overview on Design, Technology, and Characterization

J.S. Speck and E. Farzana (eds.), Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Application, AIP Publishing, Melville, New York, ISBN: 978-0-7354-2500-2, pp. 10-1–10-26, doi:10.1063/9780735425033_010 (2023).

M. Jain, S. Kretschmer, K. Höflich, J.M.J. Lopes, and A.V. Krasheninnikov

Atomistic Simulations of Defects Production under Ion Irradiation in Epitaxial Graphene on SiC

phys. stat. soll (rrl), vol. 17, no. 3, pp. 2200292, doi:10.1002/pssr.202200292 (2023).

V. Faldu, O. Beier, A. Pfuch, K. Horn, J. Zender, D. Wolf, T. Filler, W. Heinrich, U. Winterwerber, N. Lobo Ploch

Polymer surface functionalization using a new µ-wave driven atmospheric pressure plasma-jet device

J. Plast. Technol., vol. 19, no. 2, pp. 52-72 (2023).

E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, and O. Hilt

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

IEEE Electron Device Lett., vol. 44, no. 3, pp. 388-391 (2023).

J.-P. Koester, H. Wenzel, M. Wilkens, A. Knigge

Simulation and analysis of high‑brightness tapered ridge‑waveguide lasers

Opt. Quant. Electron., vol. 55, no. 3, art. 285, doi:10.1007/s11082-022-04511-z (2023).

A. Boni, H. Wenzel and P. Crump

Impact of the capture time on power saturation of quantum-well diode lasers

Phys. Scr., vol. 98, no. 3, pp. 035017, doi:10.1088/1402-4896/acbacc (2023).

S. Wohlfeil, H. Christopher, J. Fricke, H. Wenzel, A. Knigge, and G. Tränkle

Picosecond pulses with 40 W peak power from a passively mode-locked tapered quantum well laser

Electron. Lett., vol. 59, no. 4, pp. e12736, doi:10.1049/ell2.12736 (2023).

P. Hildenstein, D. Feise, F. Mauerhoff, N. Werner, K. Paschke, and G. Tränkle

Switchable thermal waveguides in GaAs based devices

AIP Adv., vol. 13, no. 2, pp. 025358, doi:10.1063/5.0132023 (2023).

C. Tyborski, M.T. Hassan, T. Flisgen, M. Schiemangk, and A. Wicht

Extensive study of magneto-optical and optical properties of Cd_1−xMn_xTe between 675 and 1025 nm

AIP Adv., vol. 13, no. 1, pp. 015213, doi:10.1063/5.0130535 (2023).

T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Grüneberg, M. Pietsch, J. Rehm, T.T.V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler, and A. Popp

Suppression of particle formation by gas- phase pre-reactions in (100) MOVPE-grown β- Ga₂O₃ films for vertical device application

Appl. Phys. Lett., vol. 122, no. 5, pp. 052102, doi:10.1063/5.0133589 (2023).

M.A. Bergmann, J. Enslin, M. Guttmann, L. Sulmoni, N. Lobo Ploch, F. Hjort, T. Kolbe, T. Wernicke, M. Kneissl, and A. Haglund

Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing

ACS Photonics, vol. 10, no. 2, pp. 368−373, doi:10.1021/acsphotonics.2c01352 (2023).

L. Tadmor, E. Brusaterra, E. Bahat Treidel, F. Brunner, N. Bickel, S.S.T. Vandenbroucke, C. Detavernier, J. Würfl and O. Hilt

Effects of post metallization annealing on Al₂O₃ atomic layer deposition on n-GaN

Semicond. Sci. Technol., vol. 38, no. 1, pp. 015006, doi:10.1088/1361-6641/aca42a (2023).

T. Flisgen, S.G. Zadeh, E. Gjonaj

Influence of vacuum chamber port terminations on beam coupling impedances

Phys. Rev. Accel. Beams, vol. 26, no. 1, pp. 014601, doi:10.1103/PhysRevAccelBeams.26.014601 (2023).

A. Knauer, T. Kolbe, S. Hagedorn, J. Hoepfner, M. Guttmann, H.K. Cho, J. Rass, J. Ruschel, S. Einfeldt, M. Kneissl, and M. Weyers

Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

Appl. Phys. Lett., vol. 122, no. 01, pp. 011102, doi:10.1063/5.0134253 (2023).

A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, M. Weyers

Growth of compressively strained Ga_xIn_1−xAs_yP_1−y quantum wells for 690–730 nm laser emission

J. Cryst. Growth, vol. 604, art. 127055 (2023).

N. Ammouri, H. Christopher, J. Fricke, A. Ginolas, A. Liero, A. Maaßdorf, H. Wenzel, and A. Knigge

Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Electron. Lett., vol. 59, no. 1, pp. e12680, doi:10.1049/ell2.12680 (2023).

M. Elattar, O. Brox, P. Della Casa, A. Mogilatenko, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, M. Weyers and P. Crump

High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness

Phys. Scr., vol. 98, no. 1, pp. 015506, doi:10.1088/1402-4896/aca637 (2023).

J. Schleusener, S.B. Lohan, L. Busch, K. Ghoreschi, N. Lobo Ploch, S. May, S. Vogel, J. Eberle, M.C. Meinke

Treatment of the Candida subspecies Candida albicans and Candida parapsilosis with two far-UVC sources to minimise mycoses in clinical practice

Mycoses, vol. 66, no. 1, pp. 25-28, doi:0.1111/myc.13521 (2023).