Publikationen

M. Chi, A. Müller, A.K. Hansen, O.B. Jensen, P.M. Petersen, B. Sumpf

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 762 nm for daylight imaging

Opt. Commun., vol. 514, pp. 128120 (2022).

L. Cancellara, S. Hagedorn, S. Walde, D. Jaeger, and M. Albrecht

Formation of voids and their role in the recovery of sputtered AlN during hightemperature annealing

J. Appl. Phys., vol. 131, no. 21, pp. 215304 (2022).

J. Okocha, M. Rudolph

A Compact Wide Coverage 0.7-1.5 GHz MEMS-based Impedance Tuner

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 25-28 (2022).

P. Manchanda, S. Krause, W. Heinrich, M. Rudolph

Characteristics of Diode Detectors for Six-Port Radars

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 49-52 (2022).

A. Tomaz, S. Gerlich, M. Rudolph, C. Andrei

A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 65-68 (2022).

M.K. Rao, A. Wentzel, C. Andrei, M. Rudolph

GaN-HEMT Integrated Switch LNA Module for 5G Mobile Communications

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 69-71 (2022).

K. Sowoidnich, S. Vogel, M. Maiwald, and B. Sumpf

Determination of Soil Constituents Using Shifted Excitation Raman Difference Spectroscopy

Appl. Spectrosc., vol. 76, no. 6, pp. 712-722, doi:10.1177/00037028211064907 (2022).

A. Rumiantsev, R. Doerner, J. Martens, S. Reyes

Inter-Laboratory Comparison of On-Wafer Broadband 70kHz-220GHz Single-Sweep Measurements

Proc. 51th European Microwave Conference (EuMC 2021), London, UK, Apr. 4-6, ISBN: 978-2-87487-063-7, pp. 425-428 (2022).

P. Beleniotis, S. Chevtchenko, M. Rudolph

Statistical Modeling of GaN HEMTs by Direct Transfer of Variations to Model Parameters

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 63-66 (2022).

E. Kaule, C. Andrei, M. Rudolph

Output Power Limited Rugged GaN LNA MMIC

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 133-135 (2022).

M. Hossain, R. Doerner, H. Yacoub, T.K. Johansen, W. Heinrich, V. Krozer

Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 140-143 (2022).

F. Buballa, S. Linnhoff, T. Hoffmann, A. Wentzel, W. Heinrich, F. Gerfers

A 4 GBaud 5 Vpp Pre-Driver for GaN based Digital PAs in 22 nm FDSOI using LDMOS

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 156-159 (2022).

S. Haque, F. Schnieder, O. Hilt, R. Doerner, F. Brunner, M. Rudolph

Noise Modeling of GaN/AlN HEMT

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 185-188 (2022).

A. Shrestha, R. Doerner, H. Yacoub, T.K. Johansen, W. Heinrich, V. Krozer, M. Rudolph, A. Wentzel

A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 225-228 (2022).

M. Hossain, T. Shivan, R. Doerner, S. Seifert, H. Yacoub, T.K. Johansen, W. Heinrich, V. Krozer

A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 237-240 (2022).

A. Turhaner, M. Hossain, M. Brahem, T.K. Johansen

A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 269-272 (2022).

J. E. Boschker, U. Spengler, P. Ressel, M. Schmidbauer, A. Mogilatenko, and A. Knigge

Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum

IEEE Photonics J., vol. 14, no. 3, art. 1531606, doi:10.1109/JPHOT.2022.3176675 (2022).

S. Wu, M. Guttmann, N. Lobo-Ploch, F. Gindele, N. Susilo, A. Knauer, T. Kolbe, J. Raß, S. Hagedorn, H.K. Cho, K. Hilbrich, M. Feneberg, R. Goldhahn, S. Einfeldt, T. Wernicke, M. Weyers and M. Kneissl

Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin

Semicond. Sci. Technol., vol. 37, no. 06, pp. 065019 (2022).

Md. J. Miah, A. Boni, S. Arslan, D. Martin, P. Della Casa, and P. Crump

Optimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality

IEEE Photonics J., vol. 14, no. 3, art. 1525505, doi:10.1109/JPHOT.2022.3165399 (2022).

P. Crump, Md. J. Miah, M. Wilkens, J. Fricke, H. Wenzel, and A. Knigge

60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers

IEEE Photonics J., vol. 14, no. 3, art. 1524305, doi:10.1109/JPHOT.2022.3166591 (2022).

J.H. Kang, H. Wenzel, E. Freier, V. Hoffmann, J. Fricke, O. Brox, M. Matalla, and S. Einfeldt

Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings

Photon. Res., vol. 10, no. 5, pp. 1157-1161 (2022).

M. Guttmann, N. Lobo-Ploch, H. Gundlach, F. Mehnke, L. Sulmoni, T. Wernicke, H.K. Cho, K. Hilbrich, A. Külberg, M. Friedler, T. Filler, I. Käpplinger, D. Mitrenga, C. Maier, O. Brodersen, T. Ortlepp, U. Woggon, S. Einfeldt and M. Kneissl

Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters

J. Phys. D: Appl. Phys., vol. 55, no. 20, pp. 205105, doi:10.1088/1361-6463/ac5145 (2022).

I. Utke, P. Swiderek, K. Höflich, K. Madajska, J. Jurczyk, P. Martinović, I.B. Szymańska

Coordination and organometallic precursors of group 10 and 11: Focused electron beam induced deposition of metals and insight gained from chemical vapour deposition, atomic layer deposition, and fundamental surface and gas phase studies

Coord. Chem. Rev., vol. 458, pp. 213851, doi:10.1016/j.ccr.2021.213851 (2022).

A. Marianovich, S. Spiekermann, M. Brendel, P. Wessels, J. Neumann, M. Weyers, and D. Kracht

Passively Q-switched microchip laser based picosecond light source in the visible-red to near-infrared band for semiconductor excitation

Opt. Express, vol. 30, no. 9, pp. 15428-15435 (2022).

M. Fregolent, E. Brusaterra, C. De Santi, K. Tetzner, J. Würfl, G. Meneghesso, E. Zanoni, and M. Meneghini

Logarithmic trapping and detrapping in β-Ga₂O₃ MOSFETs: Experimental analysis and modeling

Appl. Phys. Lett., vol. 120, no. 16, pp. 163502, doi:10.1063/5.0085068 (2022).

H. Yazdani, S. Chevtchenko, F. Brunner, G. Tränkle, and J. Würfl

Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors

phys. stat. sol (a), vol. 219, no. 8, pp. 2100802, doi: 10.1002/pssa.202100802 (2022).

P.M. Nkebiwe, K. Sowoidnich, M. Maiwald, B. Sumpf, T.E. Hartmann, D. Wanke, T. Müller

Detection of calcium phosphate species in soil by confocal µ-Raman spectroscopy

J. Plant Nutr. Soil Sci., vol. 185, no. 2, pp. 221-231, doi:10.1002/jpln.202100233 (2022).

N. Werner, N. Thieß, K. Paschke, and G. Tränkle

Optical Feedback Generated by Tapered Amplifiers Emitting at 1120 nm

IEEE J. Quantum Electron., vol. 58, no. 2, pp. 2000508, doi:10.1109/JQE.2022.3146588 (2022).

S. Walde, C.-Y. Huang, C.-L. Tsai, W.-H. Hsieh, Y.-K. Fu, S. Hagedorn, H. -W. Yen, T.-C. Lu, M. Weyers, C.-Y. Huang

High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

Acta Mater., vol. 226, pp. 117625 (2022).

A. Strangfeld, B. Wiegand, J. Kluge, M. Schoch, and M. Krutzik

Compact plug and play optical frequency reference device based on Doppler-free spectroscopy of rubidium vapor

Opt. Express, vol. 30, no. 7, pp. 12039-12047, doi:10.1364/OE.453942 (2022).

B. Sumpf, A. Müller, M. Braune, J. Gleim, N. Ruhnke, M. Vastag, M. Maiwald

Diode laser based light sources for shifted excitation resonance Raman difference spectroscopy in the spectral range between 450 nm and 532 nm

Proc. of SPIE, vol. 11978, Plasmonics in Biology and Medicine XIX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1197802 (2022).

M. Maiwald, K. Sowoidnich, B. Sumpf

On-site shifted excitation Raman difference spectroscopy for soil investigations

Proc. of SPIE, vol. 11978, Plasmonics in Biology and Medicine XIX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1197804 (2022).

Md.J. Miah, A. Boni, D. Martin, A. Knigge, P. Della Casa, and P. Crump

Kilowatt-class, 1-cm diode laser bars at 910-940 nm with improved power, conversion efficiency and beam quality

Proc. of SPIE, vol. 11983, High-Power Diode Laser Technology XX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1198304 (2022).

P. Crump, M. Elattar, Md.J. Miah, M. Ekterai, M.M. Karow, D. Martin, P. Della Casa, A. Maaßdorf, S. McDougall, C. Holly, S. Rauch, S. Gruetzner, S. Strohmaier, A. Knigge, and G. Tränkle

Progress in Experimental Studies into the Beam Parameter Product of GaAs-based High-Power Diode Lasers

Proc. of SPIE, vol. 11983, High-Power Diode Laser Technology XX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1198307 (2022).

M. Hübner, M. Wilkens, B. Eppich, P.S. Basler, A. Maaßdorf, D. Martin, A. Knigge, A. Ginolas, S. Kreutzmann and P. Crump

High-brightness 1.4 kW 780 nm QCW laser pump module with low-loss coupling into 1 mm fiber up to 50 % duty cycle

Proc. of SPIE, vol. 11983, High-Power Diode Laser Technology XX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1198309 (2022).

C. Mourikis, G. Blume, A. Maaßdorf, J. Fricke, K. Paschke, G. Lucas-Leclin and G. Tränkle

Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm

Proc. of SPIE, vol. 11983, High-Power Diode Laser Technology XX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 119830D (2022).

N. Werner, P. Hildenstein, H. Wenzel, K. Paschke, and G. Tränkle

Simulation of Optical Feedback Propagating through Tapered Amplifiers

Proc. of SPIE, vol. 11995, Physics and Simulation of Optoelectronic Devices XXX, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1199503 (2022).

L. Uhlig, C. Becht, E. Freier, J.H. Kang, V. Hoffmann, C. Stölmacker, S. Einfeldt, U.T. Schwarz

Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging

Proc. of SPIE, vol. 12001, Gallium Nitride Materials and Devices XVII, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1200106 (2022).

M. Meneghini, F. Piva, C. De Santi, N. Trivellin, M. Buffolo, N. Roccato, R. Brescancin, M. Grigoletto, D. Fiorimonte, S. Einfeldt, J. Glaab, J. Ruschel, N. Susilo, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni

UV LED reliability: degradation mechanisms and challenges

Proc. of SPIE, vol. 12001, Gallium Nitride Materials and Devices XVII, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 120010B (2022).

M. Fregolent, E. Brusaterra, C. De Santi, K. Tetzner, J. Würfl, G. Meneghesso, E. Zanoni and M. Meneghini

Conduction properties and threshold voltage instability in β-Ga₂O₃ MOSFETs

Proc. of SPIE, vol. 12002, Oxide-based Materials and Devices XIII, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1200206 (2022).

A. Müller, M. Maiwald and B. Sumpf

Electrically wavelength adjustable DBR laser for background-free Raman spectroscopy at 785 nm

Proc. of SPIE, vol. 12021, Novel In-Plane Semiconductor Lasers XXI, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 1202103 (2022).

S. Arslan, H. Wenzel, J. Fricke, A. Thies, A. Ginolas, C. Stölmacker, A. Maaßdorf, B. Eppich, R.B. Swertfeger, S.K. Patra, R.J. Deri, M.C. Boiselle, D.L. Pope, P.O. Leisher, G. Tränkle, P. Crump

Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers

Proc. of SPIE, vol. 12021, Novel In-Plane Semiconductor Lasers XXI, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 120210F (2022).

P. Hildenstein, N. Werner, K. Paschke, and G. Tränkle

Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm

Proc. of SPIE, vol. 12021, Novel In-Plane Semiconductor Lasers XXI, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 120210G (2022).

B. Sumpf, L.S. Theurer, M. Maiwald, A. Müller, A. Maaßdorf, J. Fricke, P. Ressel, A. Knigge, G. Tränkle

Comparison of the electro-optical, spectral, and beam parameters of 785 nm DBR tapered lasers with different grating lengths

Proc. of SPIE, vol. 12021, Novel In-Plane Semiconductor Lasers XXI, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 120210H (2022).

K. Paschke, G. Blume, H. Wenzel, J. Pohl, M. Matalla, D. Feise, P. Ressel, A. Sahm, J. Glaab, B. Sumpf

635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power

Proc. of SPIE, vol. 12024, Advances in Display Technologies XII, Photonics West, Hybrid Event, San Francisco, USA, Jan 22-27, 120240A (2022).

K. Tetzner, K. Egbo, M. Klupsch, R.-S. Unger, A. Popp, T.-S. Chou, S.B. Anooz, Z. Galazka, A. Trampert, O. Bierwagen, and J. Würfl

SnO/β-Ga₂O₃ heterojunction field-effect transistors and vertical p-n diodes

Appl. Phys. Lett., vol. 120, no. 11, pp. 112110, doi:10.1063/5.0083032 (2022).

P. Beleniotis, F. Schnieder, S. Krause, S. Haque and M. Rudolph

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Int. J. Microwave Wireless Technolog., vol. 14, no. 2, pp. 134-142, doi:10.1017/S1759078721001483 (2022).

R. Tong, O. Bengtsson, J. Olsson, A. Bäcklund, and D. Dancila

Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application

IEEE Trans. Microwave Theory Tech., vol. 70, no. 2, pp. 1401-1409 (2022).

P. Zwicker, J. Schleusener, S.B. Lohan, L. Busch, C. Sicher, S. Einfeldt, M. Kneissl, A.A. Kühl, C.M. Keck, C. Witzel, A. Kramer & M.C. Meinke

Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models

Sci. Rep., vol. 12, art. 2587, doi:10.1038/s41598-022-06397-z (2022).

A. Mogilatenko, S. Walde, S. Hagedorn, C. Netzel, C.-Y. Huang, and M. Weyers

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

J. Appl. Phys., vol. 131, no. 4, pp. 045702, doi:10.1063/5.0073076 (2022).

H. Wenzel, J. Fricke, A. Maaßdorf, N. Ammouri, C. Zink, D. Martin, and A. Knigge

Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

Electron. Lett., vol. 58, no. 3, pp. 121-123, doi:10.1049/ell2.12366 (2022).

S. Bachevillier, H.-K. Yuan, K. Tetzner, D.D.C. Bradley, T.D. Anthopoulos, P.N. Stavrinou and N. Stingelin

Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material

Mater. Horiz., vol. 9, no. 1, pp. 411-416 (2022).

J. Glaab, J. Ruschel, N. Lobo Ploch, H.K. Cho, F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Weyers, S. Einfeldt, and M. Kneissl

Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs

J. Appl. Phys., vol. 131, no. 01, pp. 014501, doi:10.1063/5.0069590 (2022).

J.-P. Koester, H. Wenzel, J. Fricke, O. Brox, A. Zeghuzi, A. Müller, L.S. Theurer, B. Sumpf, A. Knigge, and G. Tränkle

Comparative Study of Monolithic Integrated MMI-Coupler-Based Dual-Wavelength Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 1, pp. 1500609 (2022).

P. Crump, M. Elattar, Md.J. Miah, M. Ekterai, M.M. Karow, D. Martin, A. Maaßdorf, S. McDougall, C. Holly, S. Rauch, S. Gruetzner, S. Strohmaier, and G. Tränkle

Experimental Studies into the Beam Parameter Product of GaAs High-Power Diode Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 1, pp. 1501111 (2022).