Determining GaN HEMT Trap Models from MHz Load-line Measurement — Synthesis and Evaluation
P. Beleniotis#, C. Andrei#, U.L. Rohde#, M. Rudolph#*
Published in:
16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 451-454 (2025).
Abstract:
The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology.
# Brandenburg University of Technology Cottbus-Senftenberg, Germany
* Ferdinand-Braun-Institut (FBH), Germany
Keywords:
Compact modeling, load-line, model parameter extraction, GaN HEMT, ASM-HEMT
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