Vertical GaN-on-Tungsten High Voltage pn-Diodes
E. Bahat Treidel1, E. Brusaterra1, L. Deriks2, S. Danylyuk2, E. Brandl3, J. Bravin3, F. Brunner1 and O. Hilt1
Published in:
International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech 2025), New Orleans, USA, May 19-22, paper 3A.3 (2025).
Abstract:
In this study, we present vertical GaN based pn-diodes designed for high-voltage applications. These devices were initially grown and processed on 4-inch sapphire substrates and subsequently transferred to 4-inch tungsten substrates, enabling a fully vertical conduction path. Laser lift-off was employed to detach the GaN-membrane device structures from their original sapphire substrate. The diodes exhibit enhanced forward conduction following the transfer process, with the ON-state resistance decreasing from 1.52 ± 0.05 mΩ·cm2 to 1.15 ± 0.05 mΩ·cm2. During this time, the blocking strength remains largely unaffected, with its wafer level median value decreasing marginally from 1015 ± 47 V to 988 ± 57 V. The high device yields achieved through the membrane transfer procedure highlight the cost-competitiveness of this vertical GaN device technology for high-power applications, eliminating the need for expensive GaN substrates.
1 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
2 Fraunhofer Institute for Laser Technology, Steinbachstr. 15, 52074 Aachen, Germany
3 EV Group, DI Erich-Thallner-Straße 1, A-4782 St. Florian am Inn, Austria
Keywords:
Gallium Nitride, Sapphire, Vertical, vertical pn-diode, Laser Lift-Off
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