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Time-resolved measurements of the E–H transition in a microwave driven ICP source
/en/research/publications/time-resolved-measurements-of-the-e-h-transition-in-a-microwave-driven-icp-source
The transition dynamics from the electrostatic to electromagnetic (E–H) coupling in a 2.45 GHz excited inductively coupled plasma (ICP) source is investigated using a set of microwave…
Dynamical simulations of single-mode lasing in large-area all-semiconductor PCSELs
/en/research/publications/dynamical-simulations-of-single-mode-lasing-in-large-area-all-semiconductor-pcsels
We perform modeling and dynamic simulations of all-semiconductor photonic crystal surface-emitting lasers (PCSELs). A two-dimensional photonic crystal consists of a GaAs layer with InGaP features,…
Ramsey-Bordé atom interferometry with a thermal strontium beam for a compact optical clock
/en/research/publications/ramsey-borde-atom-interferometry-with-a-thermal-strontium-beam-for-a-compact-optical-clock
Compact optical atomic clocks have become increasingly important in field applications and clock networks. Systems based on Ramsey-Bordé interferometry (RBI) with a thermal atomic beam seem promising…
German Microwave Conference (GeMiC)
/en/events/german-microwave-conference-gemic
FBH will participate in the 16th German Microwave Conference (GeMiC) and present current research results.
Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers
/en/research/publications/influence-of-the-passivation-method-on-the-performance-of-635-nm-ridge-waveguide-lasers
High power, compact, red edge-emitting lasers based on GaInP quantum wells are desirable for applications such as laser display technologies or two-photon upconversion. Here, we investigate the…
QNC Summit 2025
/en/events/qnc-summit-2025
The Research Fab Microelectronics Germany (FMD) invites the hardware development community to Berlin for the second QNC Summit on March 6–7, 2025, to exchange insights on quantum and neuromorphic…
Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K
/en/research/publications/radiative-and-nonradiative-recombination-processes-in-algan-quantum-wells-on-epitaxially-laterally-overgrown-alnsapphire-from-10-to-500-k
Radiative and nonradiative recombination processes are investigated in the temperature range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates.…
Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations
/en/research/publications/investigation-of-degradation-dynamics-of-265-nm-leds-assisted-by-el-measurements-and-numerical-simulations
We studied four AlGaN-based 265 nm LEDs with increasing QW thickness (1.4, 3, 6 and 9 nm) during a constant current stress at 100 A cm−2. We focused our attention on the parasitic…
Ultraviolet‑B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors
/en/research/publications/ultraviolet-b-resonant-cavity-light-emitting-diodes-with-tunnel-junctions-and-dielectric-mirrors
We demonstrate the first electrically injected AlGaN-based ultraviolet-B resonant-cavity light-emitting diode (RCLED). The devices feature dielectric SiO2/HfO2 distributed Bragg reflectors enabled by…
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC
/en/research/publications/vertical-gan-devices-reliability-challenges-and-lessons-learned-from-si-and-sic
We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low…