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Editors Pick at IEEE Electron Device Letters
/en/media-center/press-releases/editors-pick-bei-ieee-electron-device-letters
The article "Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes" by Enrico Brussatera et. al. is IEEE Electron Device Letters' Editor's Pick.
Investigation of power saturation mechanisms in GaAs based high power diode lasers
/en/events/investigation-of-power-saturation-mechanisms-in-gaas-based-high-power-diode-lasers
Seval Arslan Ferdinand-Braun-Institut Berlin
150mm buffer-free GaN-on-SiC HEMT epitaxial wafers for microwave and power device
/en/events/150mm-buffer-free-gan-on-sic-hemt-epitaxial-wafers-for-microwave-and-power-device
Jr-Tai Chen, Ph.D. SweGaN AB, Schweden
Recent Developments on Freiberger Substrates
/en/events/recent-developments-on-freiberger-substrates
Dr. Stefan Eichler Freiberger Compound Materials GmbH, Freiberg
Optisches Radar – Bildgebende Verfahren in der Radartechnik
/en/events/optisches-radar-bildgebende-verfahren-in-der-radartechnik
Dr.-Ing. Dirk Nüßler Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR
Nanoscale structured light and local light-matter interactions
/en/events/nanoscale-structured-light-and-local-light-matter-interactions
Sergey Nechayev Ferdinand-Braun-Institut Berlin
Translation of Biomedical and Bioanalytical Surface-Enhanced Raman Scattering (SERS) to Real-World Settings through the Combination with SERDS
/en/events/translation-of-biomedical-and-bioanalytical-surface-enhanced-raman-scattering-sers-to-real-world-settings-through-the-combination-with-shifted-excitation-raman-difference-spectroscopy-serds
Ass. Prof. Pietro Strobbia University of Cincinnati, Department of Chemistry
Lateral regrown blocking structures as technological tools to enable higher power, efficiency and brightness in high-power broad-area lasers
/en/events/lateral-regrown-blocking-structures-as-technological-tools-to-enable-higher-power-efficiency-and-brightness-in-high-power-broad-area-lasers
Mohamed Elattar Ferdinand-Braun-Institut Berlin
Degradation of UV LEDs and the role of charge carrier density
/en/events/degradation-of-uv-leds-and-the-role-of-charge-carrier-density
Jan Ruschel Ferdinand-Braun-Institut Berlin
Thermal waveguiding in GaAs based devices
/en/events/thermal-waveguiding-in-gaas-based-devices
Philipp Hildenstein Ferdinand-Braun-Institut