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Publications
/en/research/publications/characterization-of-decomposition-in-gax-in1-x-asy-p1-y-layers-by-z-contrast-imaging-eels-and-cbed
Polarization dynamics of strained 1.3µm InGaAsP-InP lasers: spectral properties and lateral near-field behaviour
/en/research/publications/polarization-dynamics-of-strained-13um-ingaasp-inp-lasers-spectral-properties-and-lateral-near-field-behaviour
Emission from a tensile-strained ridge-waveguide InGaAsP–InP laser, which exhibits a transition between TE and TM polarization when the DC injection current exceeds a certain value, was investigated…
Oxidation and reduction kinetics of eutectic SnPb, InSn, and AuSn: a knowledge base for fluxless solder bonding applications
/en/research/publications/oxidation-and-reduction-kinetics-of-eutectic-snpb-insn-and-ausn-a-knowledge-base-for-fluxless-solder-bonding-applications
For microelectronics and especially for upcoming new packaging technologies in micromechanics and photonics fluxless, reliable and economic soldering technologies are needed. In this article, we…
Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability
/en/research/publications/non-radiative-current-in-ingaasalgaas-laser-diodes-as-a-measure-of-facet-stability
We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, Inr, from the…
Coplanar Passive Elements on Si Substrate for Frequencies up to 110 GHz
/en/research/publications/coplanar-passive-elements-on-si-substrate-for-frequencies-up-to-110-ghz
This paper provides both modeling and design information on coplanar passive elements on silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and…
Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy
/en/research/publications/real-time-growth-monitoring-of-ingaasinp-hbt-structures-with-reflectance-anisotropy-spectroscopy
Reflectance anisotropy spectroscopy (RAS) was used for in-situ monitoring of MOVPE growth of InGaAs/InP-heterojunction bipolar transistors (HBT). Spectra were recorded during growth of differently…
X-ray study of lateral strain and composition modulation in an AlGaAs overlayer induced by a GaAs lateral surface grating
/en/research/publications/x-ray-study-of-lateral-strain-and-composition-modulation-in-an-algaas-overlayer-induced-by-a-gaas-lateral-surface-grating
A lateral surface grating has been prepared by holographic photolithography followed by wet chemical etching on a slightly misaligned GaAs [001] substrate. The structural parameters were investigated…
MOVPE growth of highly strained InGaAs/GaAs quantum wells
/en/research/publications/movpe-growth-of-highly-strained-ingaasgaas-quantum-wells
The indium incorporation into strained InGaAs quantum wells grown on GaAs substrate by metalorganic vapourphase epitaxy is found to be reduced in comparison to relaxed layers. Additionally, the…
European Chiplet Innovation: APECS Pilot Line starts Operation in the Framework of the EU Chips Act
/en/media-center/press-releases/european-chiplet-innovation-apecs-pilot-line-starts-operation-in-the-framework-of-the-eu-chips-act
The pilot line for “Advanced Packaging and Heterogeneous Integration for Electronic Components and Systems” (APECS) marks a major leap forward in strengthening Europe’s semiconductor…
Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser
/en/research/publications/laser-lift-off-of-gan-based-transistors-with-an-ultra-short-pulsed-deep-uv-laser
Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser L. Deriks1, E. Bahat Treidel2, E. Brandl3, J. Bravin3, E. Brusaterra2,…