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Exploration of high-temperature PECVD SiNx for strain engineering of GaN-HEMTs
/en/research/research-news/exploration-of-high-temperature-pecvd-sinx-for-strain-engineering-of-gan-hemts
We demonstrate that high-temperature PECVD SiNx passivation layers enable controlled stress engineering in GaN-HEMTs. Our approach specifically shifts the threshold voltage up to 1.4 V, supporting…
skills4chips – Talentschmiede für eine Zukunftsbranche
/en/media-center/media-review/skills4chips-talentschmiede-fuer-eine-zukunftsbranche
Die Microtec Academy soll zu einer nationalen Bildungsakademie für Mikroelektronik und Mikrosystemtechnik ausgebaut werden
Optical metrology for efficient manufacturing of high-quality VCSELs
/en/research/research-news/optical-metrology-for-efficient-manufacturing-of-high-quality-vcsels
Using in-situ and ex-situ optical metrology, we have optimized VCSEL growth and etching processes. This ensures precise layer control, aligning emission wavelengths efficiently and enabling “first…
Advancing high-frequency communication: Scaled InP HBT transistors with fmax> 500 GHz
/en/research/research-news/advancing-high-frequency-communication-scaled-inp-hbt-transistors-with-fmax-500-ghz
We have developed a highly scalable 400 nm InP HBT process with fmax> 500 GHz. The technology offers precise control, consistent performance, and improved efficiency, contributing to…
LaNA stellt vor - Dr. Ina Ostermay
/en/media-center/media-review/lana-stellt-vor-dr-ina-ostermay
Berliner Eigengewächs oder hierher umgetopft? Aus dem schönen Sachsen nach Berlin umgetopft. Was wollten Sie als Kind beruflich machen? Ich fand Berufe faszinierend, in denen man einen weißen…
Fortschritte auf dem Gebiet der Diodenlaser und Quantenmodule
/en/media-center/media-review/fortschritte-auf-dem-gebiet-der-diodenlaser-und-quantenmodule
Das Ferdinand-Braun-Institut zeigt Fortschritte bei der Entwicklung von Diodenlasern. Dazu gehören ein verbessertes Chipdesign und die Aufbautechnik, die zu höheren Leistungen und neuen Anwendungen…
Trap characterization of GaN HEMTs with MHz load-line measurements
/en/research/research-news/trap-characterization-of-gan-hemts-with-mhz-load-line-measurements
Simple yet precise trap characterization is crucial for optimizing device and model performance. At FBH, we have developed an innovative characterization technique using MHz load-line measurements to…
Ferdinand-Braun-Institut präsentiert Laser-Neuheiten auf der Photonics West 2025
/en/media-center/media-review/ferdinand-braun-institut-praesentiert-laser-neuheiten-auf-der-photonics-west-2025
Das Berliner Institut entwickelt maßgeschneiderte Diodenlaser für den Einsatz in Industrie, Medizin und Quantentechnologien – vom Chip bis zum Prototyp. Auf der Photonics West 2025 in San Francisco…
Micromodules against microplastic pollution
/en/research/research-news/micromodules-against-microplastic-pollution-1
We’ve developed a novel micro-integrated quantum interferometer module, using entangled photons to detect microplastics in water. This compact, efficient technology enables mobile, cost-effective…
IWUMD 2025
/en/events/iwumd-2025
We are represented with several contributions at the 8th International Workshop on Ultra-Wide Bandgap Materials and Devices.