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MNE 2025
/en/events/mne-2025
FBH presents current research results at the 51st International Micro and Nano Engineering Conference.
NUSOD 2025
/en/events/nusod-2025
FBH is represented at the Conference on Numercial Simulation of Optoelectronic Devices 2025 with a keynote.
Controlled Formation of Skyrmion Bags
/en/research/publications/controlled-formation-of-skyrmion-bags
Topologically non-trivial magnetic solitons are complex spin textures with a distinct single-particle nature. Although magnetic skyrmions, especially those with unity topological charge, have…
Ultraviolet-C Vertical-Cavity Surface-Emitting Lasers with Precise Cavity Length Control
/en/research/publications/ultraviolet-c-vertical-cavity-surface-emitting-lasers-with-precise-cavity-length-control
In vertical-cavity surface-emitting lasers (VCSELs), the cavity length defines the resonance wavelength, which is directly related to the laser detuning, that is, the difference between resonance…
Phonon–plasmon coupled modes in GaN vertical power structures: Carrier concentration and mobility analysis
/en/research/publications/phonon-plasmon-coupled-modes-in-gan-vertical-power-structures-carrier-concentration-and-mobility-analysis
Confocal Raman microscopy is proposed as a non-invasive method for determining carrier density and mobility in GaN structures used in vertical power devices. The electronic properties of two GaN…
Vertical GaN-on-Tungsten High Voltage pn-Diodes
/en/research/publications/vertical-gan-on-tungsten-high-voltage-pn-diodes
In this study, we present vertical GaN based pn-diodes designed for high-voltage applications. These devices were initially grown and processed on 4-inch sapphire substrates and subsequently…
Vertical GaN Trench MOSFETs with HfO2 / Al2O3 Layered Gate Dielectric
/en/research/publications/vertical-gan-trench-mosfets-with-hfo2-al2o3-layered-gate-dielectric
In this study, vertical GaN trench MOSFETs were fabricated utilizing a novel gate dielectric composed of hafnium oxide (HfO2) layered with aluminum oxide (Al2O3) to enhance device performance…
Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques
/en/research/publications/systematic-analysis-of-the-trapping-and-reliability-of-al2o3gan-mos-capacitors-with-different-atomic-layer-deposition-techniques
We investigate the robustness and charge trapping phenomena under positive and negative bias stress in Al2O3/n-GaN metal-oxide-semiconductor capacitors fabricated with different atomic layer…
Repetition Frequency Detuning in Mode-Locked Lasers with Integrated S-Bend Waveguide
/en/research/publications/repetition-frequency-detuning-in-mode-locked-lasers-with-integrated-s-bend-waveguide
We present the integration of an S-bend waveguide into the cavity of a mode-locked diode laser to tune its repetition frequency for use in terahertz time-domain spectroscopy applications. The…
Joint paper on the back cover of “Advanced Materials”
/en/media-center/press-releases/joint-paper-on-the-back-cover-of-advanced-materials
“Controlled Formation of Skyrmion Bags” is featured on the back cover of “Advanced Materials” Volume 12, Issue 13.