M. Hossain¹, T. Shivan¹, M. Hrobak¹, T. Al-Sawaf¹, D. Stoppel¹, H. Yacoub¹, N. Weimann¹, W. Heinrich¹ and V. Krozer^1,2

Published in:

Proc. 15th European Microwave Integrated Circuits Conference (EuMIC 2020), Utrecht, Netherlands, Jan. 11-12, pp. 193-196 (2021).

Abstract:

This paper presents a W-band transceiver chip using InP-DHBT technology for future 5G application. It consists of a transceiver switch, a medium power amplifier (MPA) and a low noise amplifier (LNA) in 0.8 µm InP-DHBT technology. The switch operates from 75 GHz to 110 GHz and simulation results show more than 20 dB isolation and 1 dB output power (P_1dBout) of 15 dBm. The measured MPA exhibits 16 dBm saturated output power (Psat) with 18% power added efficiency (PAE) at 90 GHz. The measured LNA small signal gain is higher than 30 dB from 75 to 110 GHz and the measured noise figure values are below 9 dB. After integrating individual components (switch, LNA and PA), the entire transceiver chip achieves a measured isolation of more than 15 dB. The entire circuit consumes total 280 mW DC power. The chip area is only 2.5×1.5 mm². To the knowledge of the authors, this is the first monolithically integrated transceiver covering the W-band for future 5G communication reported so far.

Keywords:

InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), millimeter wave MMIC, transceiver, 5G communications, transferred-substrate process (TS).

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