A coplanar 38-GHz SiGe MMIC oscillator
C.N. Rheinfelder1, F. Beißwanger2, J. Gerdes1, F.J. Schmückle1, K.M. Strohm2, J.-F. Luy2, W. Heinrich1
Published in:
IEEE Microwave and Guided Wave Lett., vol. 6, no. 11, pp. 398-400 (1996).
Abstract:
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a conversion (dc to rf) efficiency of 6% is measured.
1 Ferdinand-Braun-Institut für Höchstfreyuenztechnik, 12489 Berlin, Germany
2 Daimler-Benz AG, 89081 Ulm, Germany
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