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OpTecBB Summer School "Photonic Integration"
/en/events/optecbb-summer-school-photonic-integration
At the FBH on tuesday 26.09.2017
Flyer_GaN_Microwave_web.pdf
/fileadmin/downloads/Publications/Flyer/Flyer_GaN_Microwave_web.pdf
GaN Microwave & Power Switching Devices Competence in GaN Device Design & Technology The FBH develops and fabricates GaN-based electronic devices for microwave power amplifiers and fast highpower…
Dissertationspreis Adlershof für Dr. Neysha Lobo Ploch und Dr. Jan-Ferenc Kischkat
/en/media-center/media-review/dissertationspreis-adlershof-fuer-dr-neysha-lobo-ploch-und-dr-jan-ferenc-kischkat
Der Preis ging erstmalig in der 14-jährigen Geschichte der Auszeichnung an zwei Preisträger.
Advances in Physical Simulation of Transferred Substrate InP/InGaAs DHBT
/en/research/research-news/advances-in-physical-simulation-of-transferred-substrate-inpingaas-dhbt
Device modeling is crucial for circuit design, thus improving device design and fabrication process. Recent advances in physical device modeling of our in-house transferred substrate InP/InGaAs…
frequent_08-2017_online.pdf
/fileadmin/downloads/Publications/frequent/frequent_08-2017_online.pdf
frequent Next-Generation Wireless Communications Making the Infrastructure Hardware Ready for 5G W Towards the digital base station transmitter W Boosting energy efficiency for wideband systems W …
A Drain-Lag Model for GaN HEMTs based on Chalmers Model and Pulsed S-Parameter Measurements
/en/research/research-news/a-drain-lag-model-for-gan-hemts-based-on-chalmers-model-and-pulsed-s-parameter-measurements
Modeling the trapping effects of widely used GaN HEMTs remains a key issue. FBH's approach allows to derive an optimized set of parameters sensitive to trap states, enabling optimum large signal…
Highly efficient kW emission from long-resonator laser bars
/en/research/research-news/highly-efficient-kw-emission-from-long-resonator-laser-bars
Diode laser bars emitting in the 9xx nm range are the preferred light sources for a wide range of industrial and scientific high-power applications. Recent progress at the FBH in epitaxial layer…
GaN-based vertical n-channel MISFETs for switching applications
/en/research/research-news/gan-based-vertical-n-channel-misfets-for-switching-applications
True vertical inversion type GaN MISFETs have been realized at FBH that demonstrate a promising technological baseline towards larger periphery vertical GaN MISFET devices for power electronics…
Optimization of AlGaN UV photodetectors for high quantum efficiency at low voltage
/en/research/research-news/optimization-of-algan-uv-photodetectors-for-high-quantum-efficiency-at-low-voltage
FBH has developed optimized AlGaN UV photodetectors with high EQE values at very low bias voltages under bottom illumination conditions by combining sufficiently thin absorber layers and…