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1030 nm DBR tapered diode laser with over 10 W diffraction limited output power
/en/research/research-news/1030-nm-dbr-tapered-diode-laser-with-over-10-w-diffraction-limited-output-power
The rapidly growing field of biomedical imaging depends heavily on the development of ever more specialized and tailored light sources
Manufacturable 500 GHz flip-chip assemblies
/en/research/research-news/manufacturable-500-ghz-flip-chip-assemblies
FBH has developed an innovative and manufacturable mm-wave flip-chip mounting architecture with 500 GHz bandwidth using miniaturized metal bumps in an optimized vertical flip-chip transition region…
Perspektiven nach der Promotion - German Research Institutions
/en/events/perspektiven-nach-der-promotion-german-research-institutions
Alternative jobs and research fields in the surrounding of universities: German Research Institutions for international PhD-candidates.
First W-Band InP DHBT Digital Power Amplifier
/en/research/research-news/first-w-band-inp-dhbt-digital-power-amplifier
Emerging applications for high-speed communication or radar systems are driving the need for W-band power amplifiers (PA). Recently, the FBH for the first time developed a high-efficiency W-band…
Diode laser based deep ultraviolet Raman excitation
/en/research/research-news/diode-laser-based-deep-ultraviolet-raman-excitation
One of the biggest challenges in Raman spectroscopy is to avoid or minimize the typically strong fluorescence background that can, in some cases, even mask the relatively weak Raman signal.
Highly Efficient High-Power G-band Frequency Multiplier in Transferred-Substrate InP DHBT Technology
/en/research/research-news/highly-efficient-high-power-g-band-frequency-multiplier-in-transferred-substrate-inp-dhbt-technology
The frequency range between 100 GHz and 1 THz offers large bandwidth for high-speed communications as well as improved spatial resolution for radar sensors and imaging systems due to the short…
Wafer-level hetero-integrated InP DHBT/SiGe BiCMOS technology for mm-wave and sub-THz applications
/en/research/research-news/wafer-level-hetero-integrated-inp-dhbtsige-bicmos-technology-for-mm-wave-and-sub-thz-applications
The mm-wave and sub-THz region from 100 to beyond 500 GHz holds many promises for emerging applications such as ultra-wideband wireless communications, high-resolution radar, spectroscopic sensing...
Can Class-G supply modulated systems replace power amplifiers in single-input, single-output systems?
/en/research/research-news/can-class-g-supply-modulated-systems-replace-power-amplifiers-in-single-input-single-output-systems
Microwave power amplifiers (PA) are core components in modern communication systems. We present a first step towards a solution to replace linear PAs with highly efficient class-G supply modulated…
New method for in-depth characterization of GaAs-based electro-optic phase modulators
/en/research/research-news/new-method-for-in-depth-characterization-of-gaas-based-electro-optic-phase-modulators
Chip-based modulators provide the means to micro-integrate phase control and modulation into hybrid laser and spectroscopy modules in a very compact and robust way. We have developed and successfully…
High temperature operation test stability of Ka-band transistors with different Al content in AlGaN layer
/en/research/research-news/high-temperature-operation-test-stability-of-ka-band-transistors-with-different-al-content-in-algan-layer
To optimize the AlGaN/GaN epitaxial structure for short channel transistors, epitaxial stacks with varying Al content of the AlGaN layer were investigated by utilizing FBH's Ka-band GaN process line.