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Can Class-G supply modulated systems replace power amplifiers in single-input, single-output systems?
/en/research/research-news/can-class-g-supply-modulated-systems-replace-power-amplifiers-in-single-input-single-output-systems
Microwave power amplifiers (PA) are core components in modern communication systems. We present a first step towards a solution to replace linear PAs with highly efficient class-G supply modulated…
New method for in-depth characterization of GaAs-based electro-optic phase modulators
/en/research/research-news/new-method-for-in-depth-characterization-of-gaas-based-electro-optic-phase-modulators
Chip-based modulators provide the means to micro-integrate phase control and modulation into hybrid laser and spectroscopy modules in a very compact and robust way. We have developed and successfully…
High temperature operation test stability of Ka-band transistors with different Al content in AlGaN layer
/en/research/research-news/high-temperature-operation-test-stability-of-ka-band-transistors-with-different-al-content-in-algan-layer
To optimize the AlGaN/GaN epitaxial structure for short channel transistors, epitaxial stacks with varying Al content of the AlGaN layer were investigated by utilizing FBH's Ka-band GaN process line.
Weiterbildung sichert Fachkräfte in Hightech-Unternehmen
/en/media-center/press-releases/weiterbildung-sichert-fachkraefte-in-hightech-unternehmen
Ergebnisse des AlFaClu-Projektes wurden auf der micro photonics 2016 vorgestellt und mit Vertreterinnen und Vertretern aus Wirtschaft, Wissenschaft und Politik diskutiert
Jetzt bewerben! OpTecBB Summer School
/en/events/jetzt-bewerben-optecbb-summer-school
Für die Summer School "Intelligente Sensorsysteme für autonomes Fahren" im September läuft die Bewerbungsfrist
Narrow-band single mode emission of blue-violet lasers based on GaN
/en/research/research-news/narrow-band-single-mode-emission-of-blue-violet-lasers-based-on-gan
GaN-based laser diodes emitting in the blue-violet spectral region are promising light sources for spectroscopy and atomic clocks. FBH successfully realized a stable narrow-band emission with DBR and…
Digital microwave power amplifier with energy recovery
/en/research/research-news/digital-microwave-power-amplifier-with-energy-recovery
Next-generation wireless communication infrastructure demands for high flexibility, low cost, and high efficiency. On the way to a fully digital transmitter, the FBH could achieve significant…
High-power surface-grating stabilized narrow-stripe BA lasers with beam parameter product < 2 mm×mrad
/en/research/research-news/high-power-surface-grating-stabilized-narrow-stripe-ba-lasers-with-beam-parameter-product-2-mmxmrad
The FBH has developed novel broad-area (BA) diode lasers with narrow stripes whose conversion efficiency at the operating point could be significantly increased by using an optimized vertical…
GaN HEMT modeling based on Chalmers model and pulsed S-parameter measurements
/en/research/research-news/gan-hemt-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
Today, GaN high electron mobility transistors (HEMTs) have demonstrated extraordinary microwave performance including high power density, high gain, and low noise.
Wissenschaftliches Kolloquium zum 60. Geburtstag von Prof. Dr. Günther Tränkle und zur Einweihung des Neubaus
/en/research/research-news/wissenschaftliches-kolloquium-zum-60-geburtstag-von-prof-dr-guenther-traenkle-und-zur-einweihung-des-neubaus
Mit einem Festkolloquium gratulierte das FBH seinem Direktor zum 60. Geburtstag und weihte ein neues Büro- und Laborgebäude ein.